DAVID B SMITH
Medical Practice at Watercrest St, Sebastian, FL

2013012, May 16, 2013

Nov 10, 2011

13/293671

Michael Raymond Weatherspoon - West Melbourne FL, US
Lawrence Wayne Shacklette - Melbourne FL, US
Robert Patrick Maloney - West Melbourne FL, US
David M. Smith - Sebastian FL, US

Harris Corporation - Melbourne FL

H01F 5/00, H01F 7/06

336200, 296021

A method is for making an electrical inductor. The method includes forming a first subunit having a sacrificial substrate, and an electrically conductive layer defining the electrical inductor and including a first metal on the sacrificial substrate. The method includes forming a second subunit having a dielectric layer and an electrically conductive layer thereon defining electrical inductor terminals and having the first metal, and coating a second metal onto the first metal of one of the first and second subunits. The method includes aligning the first and second subunits together, heating and pressing the aligned first and second subunits to form an intermetallic compound of the first and second metals bonding adjacent metal portions together, and removing the sacrificial substrate.

2013008, Apr 11, 2013

Oct 5, 2011

13/253388

Michael Raymond Weatherspoon - West Melbourne FL, US
Lawrence Wayne Shacklette - Melbourne FL, US
Robert Patrick Maloney - West Melbourne FL, US
David M. Smith - Sebastian FL, US

Harris Corporation - Melbourne FL

H05K 1/02, H05K 3/00, B23K 31/00

174251, 228208, 228103, 216 13

A method has been described for making an electrical structure having an air dielectric and includes forming a first subunit including a sacrificial substrate, an electrically conductive layer including a first metal on the sacrificial substrate, and a sacrificial dielectric layer on the sacrificial substrate and the electrically conductive layer. The method further includes forming a second subunit including a dielectric layer and an electrically conductive layer thereon including the first metal, and coating a second metal onto the first metal of one or more of the first and second subunits. The method also includes aligning the first and second subunits together, heating and pressing the aligned first and second subunits to form an intermetallic compound of the first and second metals bonding adjacent metal portions together, and removing the sacrificial substrate and sacrificial dielectric layer to thereby form the electrical structure having the air dielectric.

2014005, Feb 27, 2014

Aug 23, 2012

13/592506

John E. Rogers - Vero Beach FL, US
Michael R. Weatherspoon - West Melbourne FL, US
David M. Smith - Sebastian FL, US

HARRIS CORPORATION - Melbourne FL

H01P 1/202, B05D 5/12

333206, 427 58

A method for constructing a radio frequency filter () includes depositing on a dielectric substrate () a plurality of layers of a conductive material (), a dielectric material (), and a sacrificial material (). The deposition is controlled to form at least one transmission line () including a shield () and a center conductor () disposed coaxially within the shield. The deposition is further controlled to form at least one distributed filter element electrically coupled to the center conductor (), and at least one housing () electrically coupled to the shield. The method also includes dissolving at least one layer of the sacrificial material to form an interior channel () within at least one shield. The dissolving of the sacrificial material also results in the formation of a interior space within at least one housing containing the distributed filter element.

2013033, Dec 19, 2013

Aug 21, 2013

13/972286

LAWRENCE WAYNE SHACKLETTE - MELBOURNE FL, US
ROBERT PATRICK MALONEY - COLORADO SPRINGS CO, US
DAVID M. SMITH - SEBASTIAN FL, US

Harris Corporation - Melbourne FL

H01F 27/28

336192

A method is for making an electrical inductor. The method includes forming a first subunit having a sacrificial substrate, and an electrically conductive layer defining the electrical inductor and including a first metal on the sacrificial substrate. The method includes forming a second subunit having a dielectric layer and an electrically conductive layer thereon defining electrical inductor terminals and having the first metal, and coating a second metal onto the first metal of one of the first and second subunits. The method includes aligning the first and second subunits together, heating and pressing the aligned first and second subunits to form an intermetallic compound of the first and second metals bonding adjacent metal portions together, and removing the sacrificial substrate.

2011028, Nov 24, 2011

May 20, 2010

12/783880

David M. Smith - Sebastian FL, US

HARRIS CORPORATION - Melbourne FL

H01F 5/00, H01F 41/04

336200, 29605

A method of making a semiconductor device and devices thereof are provided. The semiconductor device () includes a semiconductor substrate () having opposing first and second surfaces (). The device further includes a planar inductor element () disposed on said first surface. The planar inductive element () comprises a freestanding electrical conductor extending along a meandering path and defining a plurality of windings (), where the electrical conductor has a width and a height, and where a height-to-width (HW) ratio is substantially greater than 1.

2011009, Apr 28, 2011

Oct 28, 2009

12/607472

Lawrence Wayne Shacklette - Melbourne FL, US
David M. Smith - Sebastian FL, US

Harris Corporation - Melbourne FL

H02J 7/00, H01M 4/525, H01M 6/14, H01M 4/04

320101, 4292313, 429206, 296231

A micro electrical-mechanical systems (MEMS) device INCLUDES a MEMS substrate and at least one MEMS structure on the MEMS substrate. In addition, there is at least one battery cell on the MEMS substrate coupled to the at least one MEMS structure. The at least one battery cell includes a support fin extending vertically upward from the MEMS substrate and a first electrode layer on the support fin. In addition, there is an electrolyte layer on the cathode layer, and a second electrode layer on the electrolyte layer. The support fin may have a height greater than a width. The first electrode layer may have a processing temperature associated therewith that exceeds a stability temperature associated with the second electrode layer.

2013012, May 23, 2013

Nov 17, 2011

13/298359

David M. Smith - Sebastian FL, US

HARRIS CORPORATION - Melbourne FL

H01L 29/86, H01L 21/02

257531, 438381, 257E29325, 257E21022

An spiral inductor () formed on a semiconductor substrate (). One or more insulating layers () is disposed on a first surface of the semiconductor substrate. A spiral structure () is formed of a first conductive material layer disposed on the insulating layer. The spiral structure has a terminal end () at a location enclosed by one or more coils of the spiral. A ground plane () is formed of a second conductive material and disposed on a second surface located on a side of the substrate opposed from the first surface. The ground plane is defected so as to define a signal trace () formed from a portion of the ground plane. A conductive via () extends through the one or more insulating layers, and through the semiconductor substrate, to form an electrical connection between the ground plane and the terminal end.

2010032, Dec 30, 2010

Jun 24, 2009

12/490605

David M. Smith - Sebastian FL, US
Jeffrey A. Schlang - Melbourne FL, US

Harris Corporation - Melbourne FL

H01F 27/00, H01L 29/00, H01L 21/77, H01F 41/00, H01F 5/00

257531, 438381, 296021, 257E21022, 257E29001, 257E21598

An IC device () includes an IC body () having a base layer () and first and second upper layers () on the base layer. The IC body includes a cavity region () extending through said base and first upper layers and at least a portion of said second upper layer. In the IC device, a portion of said second upper layer in the cavity region comprises a planar inductive element () having first and second contacting ends (). In the IC device, at least one support member () extends at least partially into said cavity region from said IC body in at least a first direction parallel to said base layer and intersects at least a portion of said planar inductive element.

2012003, Feb 9, 2012

Aug 4, 2010

12/850400

David M. Smith - Sebastian FL, US

Harris Corporation - Melbourne FL

H01L 29/92, H01L 21/02

257534, 438396, 257532, 257E21012, 257E29342

Semiconductor devices () and methods of making the same. Each of the semiconductor devices includes a substrate () having a first surface () and an opposing second surface. A vertical capacitive element () is disposed on the first surface of the substrate. The vertical capacitive element comprises a plurality of parallel conductive plates () extending transverse to the first surface of the substrate. Adjacent conductive plates are spaced a distance D from each other. A dielectric material () can be disposed in a space separating the adjacent conductive plates. Each of the conductive plates has a height-to-width (h/w) ratio greater than or equal to one.