DAVID AITAN SOLTZ
Pilots at Rennie Ave, San Jose, CA
License number
California A4014575
Issued Date
Feb 2015
Expiration Date
Feb 2016
Category
Airmen
Type
Authorized Aircraft Instructor
Address
Address
421 Rennie Ave, San Jose, CA 95127
Professional information
Manager For Materials Characterization At Solopower
Position:
Manager for Materials Characterization at SoloPower
Location:
San Francisco Bay Area
Industry:
Semiconductors
Work:
SoloPower
- San Jose CA since Jun 2007
-
Manager for Materials Characterization
Fazendinha Selma, Pocinhos do Rio Verde, MG
2003 - 2013
-
Proprietário
Nanoconduction
2007 - 2007
-
Electroplating Consultant
KLA-Tencor
Jan 2003 - Jun 2007
-
Sr. Research Scientist
KLA-Tencor
Mar 1998 - Dec 2002
-
Apps Development Engineer
Education:
Colorado State University 1996 - 1998
Post Doc, Dye Sensitization of PV materials Universidade Estadual de Campinas 1989 - 1996
PhD, Physical Chemistry, Solar Energy, Electrochemistry, Optics Weizmann Institute of Science 1985 - 1987
MSc, Physical Chemistry, PV materials State University of New York College of Environmental Sciences and Forestry 1980 - 1984
BSc, Chemistry
Post Doc, Dye Sensitization of PV materials Universidade Estadual de Campinas 1989 - 1996
PhD, Physical Chemistry, Solar Energy, Electrochemistry, Optics Weizmann Institute of Science 1985 - 1987
MSc, Physical Chemistry, PV materials State University of New York College of Environmental Sciences and Forestry 1980 - 1984
BSc, Chemistry
Skills:
Characterization, STM, AFM, Thin Films, IR, Vacuum, UV
Method And Apparatus For Detecting And Passivating Defects In Thin Film Solar Cells
US Patent:
8318239, Nov 27, 2012
Filed:
Nov 17, 2008
Appl. No.:
12/272499
Inventors:
Bulent M. Basol - Manhattan Beach CA, US
David Soltz - San Jose CA, US
David Soltz - San Jose CA, US
Assignee:
SoloPower, Inc. - San Jose CA
International Classification:
B05D 5/06
US Classification:
427 74
Abstract:
The embodiments of the present invention provide a defect detection process and apparatus to detect defects in solar cell structures. During the process, an input signal from a signal source is applied to a top surface of a transparent conductive layer of a solar cell structure. In response to the input signal, an output signal is generated from a predetermined area of the top surface and detected by a defect detector. The output signal carrying the defect position information is transmitted to a computer and registered in a database. With the position information, an injector is driven to the defect location to apply an insulator to passivate the defect. A finger pattern layer may be formed over the predetermined area after completing the defect detection and passivation processes.
High Contrast Inspection And Review Of Magnetic Media And Heads
US Patent:
6936816, Aug 30, 2005
Filed:
Apr 28, 2004
Appl. No.:
10/833611
Inventors:
Marian Mankos - San Francisco CA, US
David A. Soltz - San Jose CA, US
Harald F. Hess - La Jolla CA, US
David A. Soltz - San Jose CA, US
Harald F. Hess - La Jolla CA, US
Assignee:
KLA-Tencor Technologies Corporation - Milpitas CA
International Classification:
G01N023/225, G11B009/10
US Classification:
250307, 250310, 369101
Abstract:
One embodiment disclosed relates to a method for inspecting or reviewing a magnetized specimen using an automated inspection apparatus. The method includes generating a beam of incident electrons using an electron source, biasing the specimen with respect to the electron source such that the incident electrons decelerate as a surface of the specimen is approached, and illuminating a portion of the specimen at a tilt with the beam of incident electrons. The specimen is moved under the incident beam of electrons using a movable stage of the inspection apparatus. Scattered electrons are detected to form image data of the specimen showing distinct contrast between regions of different magnetization. The movement of the specimen under the beam of incident electrons may be continuous, and data for multiple image pixels may be acquired in parallel using a time delay integrating detector.
Inline Inspection Of Photovoltaics For Electrical Defects
US Patent:
7649365, Jan 19, 2010
Filed:
Mar 24, 2007
Appl. No.:
11/690809
Inventors:
Kirk J. Bertsche - San Jose CA, US
David L. Brown - Sunnyvale CA, US
J. Kirkwood H. Rough - San Jose CA, US
David A. Soltz - San Jose CA, US
Yehiel Gotkis - Fremont CA, US
David L. Brown - Sunnyvale CA, US
J. Kirkwood H. Rough - San Jose CA, US
David A. Soltz - San Jose CA, US
Yehiel Gotkis - Fremont CA, US
Assignee:
KLA-Tencor Corporation - Milpitas CA
International Classification:
G01R 31/302, G01R 31/08
US Classification:
324752, 324522
Abstract:
A method of inline inspection of photovoltaic material for electrical anomalies. A first electrical connection is formed to a first surface of the photovoltaic material, and a second electrical connection is formed to an opposing second surface of the photovoltaic material. A localized current is induced in the photovoltaic material and properties of the localized current in the photovoltaic material are sensed using the first and second electrical connections. The properties of the sensed localized current are analyzed to detect the electrical anomalies in the photovoltaic material.
Systems And Methods For Reducing Alteration Of A Specimen During Analysis For Charged Particle Based And Other Measurement Systems
US Patent:
7394067, Jul 1, 2008
Filed:
Jul 20, 2005
Appl. No.:
11/185915
Inventors:
David Soltz - San Jose CA, US
Paul Wieczorek - San Jose CA, US
Aaron Zuo - Fremont CA, US
Gabor Toth - San Jose CA, US
Paul Wieczorek - San Jose CA, US
Aaron Zuo - Fremont CA, US
Gabor Toth - San Jose CA, US
Assignee:
KLA-Tencor Technologies Corp. - Milpitas CA
International Classification:
G01B 15/04
US Classification:
250310, 2504922, 250307, 250306, 250288, 118725, 118719, 438758, 438708, 216 62
Abstract:
Systems and methods for reducing alteration of a specimen during by charged particle based and other measurements systems are provided. One system configured to reduce alteration of a specimen during analysis includes a vacuum chamber in which the specimen is disposed during the analysis and an element disposed within the vacuum chamber. A surface of the element is cooled such that molecules in the vacuum chamber are adsorbed onto the surface and cannot cause alteration of a characteristic of the specimen during the analysis. One system configured to analyze a specimen includes an analysis subsystem configured to analyze the specimen while the specimen is disposed in a vacuum chamber and an element disposed within the vacuum chamber. A surface of the element is cooled such that molecules in the vacuum chamber are adsorbed onto the surface and cannot cause alteration of a characteristic of the specimen during the analysis.
Systems Configured To Reduce Distortion Of A Resist During A Metrology Process And Systems And Methods For Reducing Alteration Of A Specimen During Analysis
US Patent:
7304302, Dec 4, 2007
Filed:
Aug 29, 2005
Appl. No.:
11/215745
Inventors:
Peter Nunan - Monte Sereno CA, US
Muhran Nasser-Ghodsi - Hamilton MA, US
Mark Borowicz - San Jose CA, US
Rudy F. Garcia - Union City CA, US
Tzu Chin Chuang - Cupertino CA, US
Herschel Marchman - San Jose CA, US
David Soltz - San Jose CA, US
Muhran Nasser-Ghodsi - Hamilton MA, US
Mark Borowicz - San Jose CA, US
Rudy F. Garcia - Union City CA, US
Tzu Chin Chuang - Cupertino CA, US
Herschel Marchman - San Jose CA, US
David Soltz - San Jose CA, US
Assignee:
KLA-Tencor Technologies Corp. - Milpitas CA
International Classification:
H01J 37/21
US Classification:
250311, 2504431, 250397, 250306, 250310, 356 36
Abstract:
Various systems configured to reduce distortion of a resist during a metrology process are provided. The systems include an electron beam metrology tool configured to measure one or more characteristics of one or more resist features formed on a specimen. The electron beam metrology tool may be configured as a scanning electron microscope. The resist may be designed for exposure at a wavelength of about 193 nm. One system includes a cooling subsystem configured to alter a temperature of the specimen during measurements by the tool such that the resist feature(s) are not substantially distorted during the measurements. Another system includes a drying subsystem that is configured to reduce moisture proximate the specimen during measurements by the electron beam metrology tool such that the resist feature(s) are not substantially distorted during the measurements. An additional system may include both the cooling subsystem and the drying subsystem.
Method And Apparatus To Remove A Segment Of A Thin Film Solar Cell Structure For Efficiency Improvement
US Patent:
8318240, Nov 27, 2012
Filed:
Feb 9, 2010
Appl. No.:
12/703120
Inventors:
Geordie Zapalac - Santa Cruz CA, US
David Soltz - San Jose CA, US
Bulent M. Basol - Manhattan Beach CA, US
David Soltz - San Jose CA, US
Bulent M. Basol - Manhattan Beach CA, US
Assignee:
SoloPower, Inc. - San Jose CA
International Classification:
B05D 5/12, B05D 3/12, C23C 16/52, B05C 13/00, B23P 6/00
US Classification:
427 74, 427 8, 427 76, 427142, 427277, 427356, 2940209
Abstract:
The present inventions relate to methods and apparatus for detecting and mechanically removing defects and a surrounding portion of the photovoltaic layer and the substrate in a thin film solar cell such as a Group IBIIIAVIA compound thin film solar cell to improve its efficiency.
Capping Layer To Impede Atom Ejection
US Patent:
7049590, May 23, 2006
Filed:
Oct 28, 2004
Appl. No.:
10/977620
Inventors:
David Aitan Soltz - San Jose CA, US
Assignee:
KLA-Tencor Technologies Corporation - Milpitas CA
International Classification:
G01N 23/223
US Classification:
250310, 250339, 378 46, 378 45
Abstract:
A method of reducing atom ejection from a sample during electron beam bombardment. An electron beam is directed through a low pressure environment toward a surface of the sample. The electron beam thereby impinges on the sample at a target location, and thereby causes characteristic x-ray emission from the target location of the sample. A capping precursor is introduced into the low pressure environment, where the capping precursor forms a capping layer on the surface of the sample at the target location when contacted by the electron beam. The capping layer thereby reduces atom ejection from the sample at the target location, while not appreciably impeding and confounding the characteristic x-ray emission from the target location of the sample.
Inline Inspection Of Photovoltaics For Electrical Defects
US Patent:
7906972, Mar 15, 2011
Filed:
Dec 4, 2009
Appl. No.:
12/631260
Inventors:
Kirk J. Bertsche - San Jose CA, US
David L. Brown - Sunnyvale CA, US
J. Kirkwood H. Rough - San Jose CA, US
David A. Soltz - San Jose CA, US
Yehiel Gotkis - Fremont CA, US
David L. Brown - Sunnyvale CA, US
J. Kirkwood H. Rough - San Jose CA, US
David A. Soltz - San Jose CA, US
Yehiel Gotkis - Fremont CA, US
Assignee:
KLA-Tencor Corporation - Milpitas CA
International Classification:
G01R 31/08, G01R 31/26
US Classification:
324522, 32476101
Abstract:
A method of inline inspection of photovoltaic material for electrical anomalies. A first electrical connection is formed to a first surface of the photovoltaic material, and a second electrical connection is formed to an opposing second surface of the photovoltaic material. A localized current is induced in the photovoltaic material and properties of the localized current in the photovoltaic material are sensed using the first and second electrical connections. The properties of the sensed localized current are analyzed to detect the electrical anomalies in the photovoltaic material.
Integrated Segmented Scintillation Detector
US Patent:
7560703, Jul 14, 2009
Filed:
Jul 2, 2007
Appl. No.:
11/772301
Inventors:
David A. Soltz - San Jose CA, US
Ye Yang - Fremont CA, US
Mark C. Lin - San Jose CA, US
Laurence S. Horndon - Santa Clara CA, US
Edward G. Solomon - Menlo Park CA, US
Joseph A. Heanue - Palo Alto CA, US
John F. Heanue - Manchester MA, US
M. Nasser Ghodsi - Hamilton MA, US
Ye Yang - Fremont CA, US
Mark C. Lin - San Jose CA, US
Laurence S. Horndon - Santa Clara CA, US
Edward G. Solomon - Menlo Park CA, US
Joseph A. Heanue - Palo Alto CA, US
John F. Heanue - Manchester MA, US
M. Nasser Ghodsi - Hamilton MA, US
Assignee:
KLA-Tencor Corporation - Milpitas CA
International Classification:
H01J 37/244
US Classification:
250397, 250310
Abstract:
A signal conduction channel having a first element that receives electrons at a first end from a vacuum environment, produces photons as the electrons are received, and propagates the photons along a length of the first element to a distal second end, and a second element that receives the photons from the second end of the first element, converts the photons to electrons, and multiplies the electrons, where no additional element is disposed between the second end of the first element and the second element, except optionally at least one of a photon-conductive epoxy, a lens, and an optical coupling plate that touches both the second end of the first element and the second element.