DANIEL SHU-ENG CHEN, M.D.
Osteopathic Medicine in Richardson, TX
License number
Texas E5355
Category
Osteopathic Medicine
Type
Anesthesiology
License number
Texas E5355
Category
Psychiatric
Type
Interventional Pain Medicine
License number
Texas E5355
Category
Osteopathic Medicine
Type
Pain Medicine
License number
Texas E5355
Category
Osteopathic Medicine
Type
Addiction Medicine
Address
Address
375 Municipal Dr Suite #240, Richardson, TX 75080
Phone
(972) 690-7246
Professional information
Dr. Daniel S Chen, Richardson TX - MD (Doctor of Medicine)
Specialties:
Pain Medicine
Address:
Daniel Chen MD PA
375 Municipal Dr STE 240, Richardson 75080
(972) 690-7246 (Phone)
375 Municipal Dr STE 240, Richardson 75080
(972) 690-7246 (Phone)
Languages:
English, Chinese
Hospitals:
Daniel Chen MD PA
375 Municipal Dr STE 240, Richardson 75080
Methodist Richardson Medical Center
401 West Campbell Rd, Richardson 75080
375 Municipal Dr STE 240, Richardson 75080
Methodist Richardson Medical Center
401 West Campbell Rd, Richardson 75080
Education:
Medical School
Taipei Medical College
Graduated: 1973
Dallas Co Hp Parkland Mem
University Tx Sw Med Center Affil Hsps
Taipei Medical College
Graduated: 1973
Dallas Co Hp Parkland Mem
University Tx Sw Med Center Affil Hsps
Background:
Sanction: 1 time(s)
Board Actions: 2 time(s)
Board Actions: 2 time(s)
Daniel Shu-Eng Chen, Richardson TX
Specialties:
Anesthesiologist
Address:
375 Municipal Dr, Richardson, TX 75080
Nmos Transistor Having Inversion Layer Source/Drain Contacts
US Patent:
4994869, Feb 19, 1991
Filed:
Jun 30, 1989
Appl. No.:
7/375169
Inventors:
Mishel Matloubian - Emeryville CA
Daniel C. Chen - Richardson TX
Daniel C. Chen - Richardson TX
Assignee:
Texas Instruments Incorporated - Dallas TX
International Classification:
H01L 2910
US Classification:
357 233
Abstract:
A transistor (42) is provided having a gate conductor (44) formed adjacent a semiconductor substrate (46) and separated therefrom by a gate insulator (48). Sidewall spacers (52, 54) are formed at the sides of gate conductor (44) and adjacent semiconductor substrate (46). Diffused regions (56, 58) are formed within semiconductor substrate (46) in order to provide source/drain regions for transistor (42). Positive charges from radiation are trapped within sidewall spacers (52, 54) thereby attracting negative charges from semiconductor substrate (46) such that a negative charge layer is created between diffused region (56) and gate edge (50a) and also between diffused region (58) and gate edge (50b).