DANIEL J FELLER
Medical Practice in Portland, OR
License number
Pennsylvania TMA050963
Category
Medicine
Type
Temporary Physician Asst
Address
Address
2
Portland, OR 97219
Pennsylvania
Pennsylvania
Personal information
See more information about DANIEL J FELLER at radaris.comName
Address
Phone
4910 Centre Ave, Pittsburgh, PA 15213
907 Cascade Hwy NE, Salem, OR 97317
4910 Center St, Pittsburgh, PA 15213
1543 Cochran Rd, Pittsburgh, PA 15243
310 Amber St, Pittsburgh, PA 15206
Professional information
Slurries For Chemical Mechanical Polishing
US Patent:
6375552, Apr 23, 2002
Filed:
Nov 28, 2000
Appl. No.:
09/724723
Inventors:
Kenneth C. Cadien - Portland OR
Daniel A. Feller - Portland OR
Daniel A. Feller - Portland OR
Assignee:
Intel Corporation - Santa Clara CA
International Classification:
B24B 100
US Classification:
451 41, 51308, 51309
Abstract:
Novel slurries for the chemical mechanical polishing of thin films used in integrated circuit manufacturing. A tungsten slurry of the present invention comprises an oxidizing agent, such as potassium ferricyanide, an abrasive such as silica, and has a pH between two and four. The tungsten slurry of the present invention can be used in a chemical mechanical planarization process to polish back a blanket deposited tungsten film to form plugs or vias. The tungsten slurry can also be used to polish copper, tungsten silicide, and titanium nitrate. A second slurry, which is a 9:1 dilution of the tungsten slurry is ideal for chemical mechanical polishing of titanium nitride films. A third slurry of the present invention comprises a fluoride salt, an abrasive such as silica an has a pH8. The third slurry can be used to polish titanium films.
Slurries For Chemical Mechanical Polishing Tungsten Films
US Patent:
5954975, Sep 21, 1999
Filed:
Feb 7, 1997
Appl. No.:
8/796962
Inventors:
Kenneth C. Cadien - Portland OR
Daniel A. Feller - Portland OR
Daniel A. Feller - Portland OR
Assignee:
Intel Corporation - Santa Clara CA
International Classification:
H01L 21304
US Classification:
216 38
Abstract:
Novel slurries for the chemical mechanical polishing of thin films used in integrated circuit manufacturing. A tungsten slurry of the present invention comprises an oxidizing agent, such as potassium ferricyanide, an abrasive such as silica, and has a pH between two and four. The tungsten slurry of the present invention can be used in a chemical mechanical planarization process to polish back a blanket deposited tungsten film to form plugs or vias. The tungsten slurry can also be used to polish copper, tungsten silicide, and titanium nitride. A second slurry, which is a 9:1 dilution of the tungsten slurry is ideal for chemical mechanical polishing of titanium nitride films. A third slurry of the present invention comprises a fluoride salt, an abrasive such as silica and has a pH. ltoreq. 8. The third slurry can be used to polish titanium films.
Plug Or Via Formation Using Novel Slurries For Chemical Mechanical Polishing
US Patent:
6046099, Apr 4, 2000
Filed:
Jun 10, 1999
Appl. No.:
9/330236
Inventors:
Kenneth C. Cadien - Portland OR
Daniel A. Feller - Portland OR
Daniel A. Feller - Portland OR
Assignee:
Intel Corporation - Santa Clara CA
International Classification:
H01L 2130
US Classification:
438622
Abstract:
Novel slurries for the chemical mechanical polishing of thin films used in integrated circuit manufacturing. A tungsten slurry of the present invention comprises an oxidizing agent, such as potassium ferricyanide, an abrasive such as silica, and has a pH between two and four. The tungsten slurry of the present invention can be used in a chemical mechanical planarization process to polish back a blanket deposited tungsten film to form plugs or vias. The tungsten slurry can also be used to polish copper, tungsten silicide, and titanium nitride. A second slurry, which is a 9:1 dilution of the tungsten slurry is ideal for chemical mechanical polishing of titanium nitride films. A third slurry of the present invention comprises a fluoride salt, an abrasive such as silica and has a pH. ltoreq. 8. The third slurry can be used to polish titanium films.
Slurries For Chemical Mechanical Polishing
US Patent:
5516346, May 14, 1996
Filed:
May 13, 1994
Appl. No.:
8/242538
Inventors:
Kenneth C. Cadien - Portland OR
Daniel A. Feller - Portland OR
Daniel A. Feller - Portland OR
Assignee:
Intel Corporation - Santa Clara CA
International Classification:
C23F 144, B44C 122
US Classification:
51308
Abstract:
Novel slurries for the chemical mechanical polishing of thin films used in integrated circuit manufacturing. A tungsten slurry of the present invention comprises an oxidizing agent, such as potassium ferricyanide, an abrasive such as silica, and has a pH between two and four. The tungsten slurry of the present invention can be used in a chemical mechanical planarization process to polish back a blanket deposited tungsten film to form plugs or vias. The tungsten slurry can also be used to polish copper, tungsten silicide, and titanium nitride. A second slurry, which is a 9:1 dilution of the tungsten slurry is ideal for chemical mechanical polishing of titanium nitride films. A third slurry of the present invention comprises a fluoride salt, an abrasive such as silica and has a pH. ltoreq. 8. The third slurry can be used to polish titanium films.
Slurries For Chemical Mechanical Polishing
US Patent:
6178585, Jan 30, 2001
Filed:
Feb 16, 2000
Appl. No.:
9/505615
Inventors:
Kenneth C. Cadien - Portland OR
Daniel A. Feller - Portland OR
Daniel A. Feller - Portland OR
Assignee:
Intel Corporation - Santa Clara CA
International Classification:
B05C 100
US Classification:
15230
Abstract:
Novel slurries for the chemical mechanical polishing of thin films used in integrated circuit manufacturing. A tungsten slurry of the present invention comprises an oxidizing agent, such as potassium ferricyanide, an abrasive such as silica, and has a pH between two and four. The tungsten slurry of the present invention can be used in a chemical mechanical planarization process to polish back a blanket deposited tungsten film to form plugs or vias. The tungsten slurry can also be used to polish copper, tungsten silicide, and titanium nitride. A second slurry, which is a 9:1 dilution of the tungsten slurry is ideal for chemical mechanical polishing of titanium nitride films. A third slurry of the present invention comprises a fluoride salt, an abrasive such as silica and has a pH. ltoreq. 8. The third slurry can be used to polish titanium films.
Slurries For Chemical Mechanical Polishing
US Patent:
5340370, Aug 23, 1994
Filed:
Nov 3, 1993
Appl. No.:
8/146923
Inventors:
Kenneth C. Cadien - Portland OR
Daniel A. Feller - Portland OR
Daniel A. Feller - Portland OR
Assignee:
Intel Corporation
International Classification:
C23F 144, B44C 122
US Classification:
51308
Abstract:
Novel slurries for the chemical mechanical polishing of thin films used in integrated circuit manufacturing. A tungsten slurry of the present invention comprises an oxidizing agent, such as potassium ferricyanide, an abrasive such as silica, and has a pH between two and four. The tungsten slurry of the present invention can be used in a chemical mechanical planarization process to polish back a blanket deposited tungsten film to form plugs or vias. The tungsten slurry can also be used to polish copper, tungsten silicide, and titanium nitride. A second slurry, which is a 9:1 dilution of the tungsten slurry is ideal for chemical mechanical polishing of titanium nitride films. A third slurry of the present invention comprises a fluoride salt, an abrasive such as silica and has a pH. ltoreq. 8. The third slurry can be used to polish titanium films.
Slurries For Chemical Mechanical Polishing
US Patent:
5836806, Nov 17, 1998
Filed:
Mar 28, 1996
Appl. No.:
8/623487
Inventors:
Kenneth C. Cadien - Portland OR
Daniel A. Feller - Portland OR
Daniel A. Feller - Portland OR
Assignee:
Intel Corporation - Santa Clara CA
International Classification:
B24B 3704
US Classification:
451 41
Abstract:
Novel slurries for the chemical mechanical polishing of thin films used in integrated circuit manufacturing. A tungsten slurry of the present invention comprises an oxidizing agent, such as potassium ferricyanide, an abrasive such as silica, and has a pH between two and four. The tungsten slurry of the present invention can be used in a chemical mechanical planarization process to polish back a blanket deposited tungsten film to form plugs or vias. The tungsten slurry can also be used to polish copper, tungsten silicide, and titanium nitride. A second slurry, which is a 9:1 dilution of the tungsten slurry is ideal for chemical mechanical polishing of titanium nitride films. A third slurry of the present invention comprises a fluoride salt, an abrasive such as silica and has a pH. ltoreq. 8. The third slurry can be used to polish titanium films.