Dana Ray Scranton
Engineers in Kalispell, MT

6691720, Feb 17, 2004

Jul 16, 2001

09/907485

Eric Bergman - Kalispell MT
Dana Scranton - Kalispell MT
Eric Lund - Kent WA
Gil Lund - Kent WA

Semitool, Inc. - Kalispell MT

B08B 300

134155, 134159, 134186, 134200, 34108, 34184, 34279

A system for processing a workpiece includes an inner chamber pivotably supported within an outer chamber. The inner chamber has an opening to allow liquid to drain out. A motor pivots the inner chamber to bring the opening at or below the level of liquid in the inner chamber. As the inner chamber turns, liquid drains out. Workpieces within the inner chamber are supported on a holder or a rotor, which may be fixed or rotating. Multi processes may be performed within the inner chamber, reducing the need to move the workpieces between various apparatus and reducing risk of contamination.

6681499, Jan 27, 2004

Jan 3, 2003

10/336193

Dana Scranton - Kalispell MT
Ian Sharp - Kalispell MT

Semitool, Inc. - Kalispell MT

B08B 310

34467, 34418, 134 952

A processor and method for rinsing and drying of semiconductor substrates includes a process vessel contained within an outer containment vessel. A diluted organic vapor creates a Marangoni effect flow along the surface of processing liquid contained within the process vessel. The process vessel includes porous walls that allow residual chemicals, organic species, and other unwanted materials to flow from the process vessel to the outer containment vessel. The porous walls allow for the maintenance of a stable surface tension gradient to sustain a consistent Marangoni force for even drying. Replacement processing fluid is preferably introduced to the process vessel to prevent the build up of organic species in the surface layer of the processing fluid.

2002015, Oct 31, 2002

Aug 6, 2001

09/925884

Michael Kenny - Kalispell MT, US
Brian Aegeter - Kalispell MT, US
Eric Bergman - Kalispell MT, US
Dana Scranton - Kalispell MT, US

Semitool, Inc.

B08B007/04

134/001300, 134/021000, 134/034000, 134/033000, 134/030000, 134/028000, 134/902000, 134/153000, 134/095300

In a system for cleaning a workpiece or wafer, a boundary layer of heated liquid is formed on the workpiece surface. Ozone is provided around the workpiece. The ozone diffuses through the boundary layer and chemically reacts with contaminants on the workpiece surface. A jet of high velocity heated liquid is directed against the workpiece, to physically dislodge or remove a contaminant from the workpiece. The jet penetrates through the boundary layer at the point of impact. The boundary layer otherwise remains largely undisturbed. Preferably, the liquid includes water, and may also include a chemical. Steam may also be jetted onto the workpiece, with the steam also physically removing contaminants, and also heating the workpiece to speed up chemical cleaning. The workpiece and the jet of liquid are moved relative to each other, so that substantially all areas of the workpiece surface facing the jet are exposed at least momentarily to the jet. Sonic or electromagnetic energy may also be introduced to the workpiece.

2003006, Apr 3, 2003

Aug 20, 2002

10/224625

Ronald Breese - Kalispell MT, US
C. Bryer - Kalispell MT, US
Eric Bergman - Kalispell MT, US
Dana Scranton - Kalispell MT, US

Semitool, Inc

B08B007/00

134/033000, 134/088000, 134/103200, 134/134000, 134/140000

In a method for cleaning for cleaning metallic ion contamination, and especially copper, from wafer containers, the containers are loaded into a cleaning apparatus. The containers are sprayed with a dilute chelating agent solution. The chelating agent solution removes metallic contamination from the containers. The containers are then rinsed with a rinsing liquid, such as deionized water and a surfactant. The containers are then dried, preferably by applying heat and/or hot air movement.

2008008, Apr 10, 2008

Oct 9, 2007

11/869096

Joy Block - Kalispell MT, US
Dana Scranton - Kalispell MT, US
Craig Meuchel - Kalispell MT, US

Semitool, Inc. - Kalispell MT

C23G 1/02, B08B 3/08

134003000, 13405600R

A method for removing residue from a workpiece includes preparing a liquid including de-ionized water, sulfuric acid, and optionally hydrofluoric acid. Carbon dioxide gas is provided into the liquid. The liquid is maintained at a desired temperature. The liquid is applied onto a workpiece in a process chamber. The liquid may be formed into a liquid layer on the workpiece having a controlled thickness. Ozone gas may be introduced into the chamber and chemically reacts with residue on the workpiece. In a second separate method the liquid includes de-ionized water, highly dilute hydrofluoric acid and carbon dioxide, with no need for ozone gas.

6869486, Mar 22, 2005

Oct 23, 2003

10/692829

Ronald G. Breese - Kalispell MT, US
C. James Bryer - Kalispell MT, US
Eric J. Bergman - Kalispell MT, US
Dana R. Scranton - Kalispell MT, US

Semitool, Inc. - Kalispell MT

B08B003/08, B08B003/10, B08B003/12, B08B009/093

134 1, 134 221, 134 2218, 134 2219, 134 26, 134 33, 134902

In a method for cleaning for cleaning metallic ion contamination, and especially copper, from wafer containers, the containers are loaded into a cleaning apparatus. The containers are sprayed with a dilute chelating agent solution. The chelating agent solution removes metallic contamination from the containers. The containers are then rinsed with a rinsing liquid, such as deionized water and a surfactant. The containers are then dried, preferably by applying heat and/or hot air movement.

2008006, Mar 13, 2008

Sep 11, 2006

11/530703

Dana Scranton - Kalispell MT, US

C23G 1/00, B08B 7/00, B08B 3/00

134 2, 134 19, 134 26

A method for cleaning vias, trenches, or other features on a workpiece, such as a semiconductor wafer, includes pre-heating the wafer to a desired temperature. A heated processing or cleaning fluid is then applied to the workpiece. The workpiece may be heated to a temperature higher than the temperature of the processing fluid, to increase the chemical reaction efficiency between the processing fluid and the workpiece features. The workpiece may be heated before or after being loaded into a processing chamber.

2003005, Mar 20, 2003

Jul 19, 2002

10/200071

Ronald Breese - Kalispell MT, US
C. Bryer - Kalispell MT, US
Eric Bergman - Kalispell MT, US
Dana Scranton - Kalispell MT, US

Semitool, Inc.

B08B007/00

134/033000, 134/088000, 134/103200, 134/134000, 134/140000

In a method for cleaning for cleaning metallic ion contamination, and especially copper, from wafer containers, the containers are loaded into a loader of a cleaning apparatus. The containers are sprayed with a dilute chelating agent solution, while the rotor is spinning. The chelating agent solution removes metallic contamination from the containers. The containers are then sprayed with a rinsing liquid, such as deionized water and a surfactant while the rotor is spinning and heat is applied. The containers are then dried by applying heat, hot air movement and spinning the rotor.

2007011, May 17, 2007

Jan 3, 2007

11/619515

Jason Rye - Kalispell MT, US
Daniel Woodruff - Kalispell MT, US
Dana Scranton - Kalispell MT, US

B05C 11/02, B05D 3/12, C23C 16/00, B05B 1/28

427240000, 118730000, 118320000, 118052000, 118326000, 427248100

A centrifugal workpiece processor for processing semiconductor wafers and similar workpieces includes a head which holds and spins the workpiece. The head includes a rotor having a gas system. Gas is sprayed or jetted from inlets in the rotor to create a rotational gas flow. The rotational gas flow causes pressure conditions which hold the edges of a first side of the workpiece against contact pins on the rotor. The rotor and the workpiece rotate together. Guide pins adjacent to a perimeter may help to align the workpiece with the rotor. An angled surface helps to deflect spent process liquid away from the workpiece. The head is moveable into multiple different engagement positions with a bowl. Spray nozzles in the bowl spray a process liquid onto the second side of the workpiece, as the workpiece is spinning, to process the workpiece. A moving end point detector may be used to detect an end point of processing.

2006011, Jun 8, 2006

Dec 6, 2004

11/005553

Eric Bergman - Kalispell MT, US
Dana Scranton - Kalispell MT, US
Brian Aegerter - Kalispell MT, US

B08B 3/12, B08B 3/00

134001000, 134034000, 134094100, 134198000, 134137000, 134149000

In a method for cleaning a wafer, the wafer is placed a processing chamber. A layer or film of liquid is provided on the wafer. Electrically charged aerosol droplets of a liquid are formed and directed to the workpiece. The charged aerosol particles accumulate on the workpiece. This creates an electrical charge on the workpiece. Contaminant particles on the workpiece are released and/or repelled by the electrical charge and are carried away in the liquid layer. The liquid layer is optionally continuously replenished with fresh liquid. The liquid layer may be thinned out in a localized aerosol impingement area, via a jet of gas, to allow the electrical charge of the aerosol to better collect on or near the surface of the workpiece.