DALE JONATHAN PEARSON
Pilots in Bedford Hills, NY
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New York A2298085
Category
Airmen
Type
Authorized Aircraft Instructor
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Address
PO Box 217, Bedford Hills, NY 10507
Professional information
Method And Apparatus For Characterizing Switching History Impact
US Patent:
6798261, Sep 28, 2004
Filed:
May 22, 2003
Appl. No.:
10/443515
Inventors:
Manjul Bhushan - Hopewell Junction NY
Mark B. Ketchen - Hadley MA
Dale J. Pearson - Bedford Hills NY
Mark B. Ketchen - Hadley MA
Dale J. Pearson - Bedford Hills NY
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
H03K 3017
US Classification:
327172, 327176
Abstract:
A method for characterizing a change in delay induced by a switching history of a circuit includes the steps of generating a first signal having a pulse width that is selectively adjustable, the first signal having a first edge and a second edge associated therewith, the first and second edges being opposite in polarity with respect to one another; generating a second signal having a first switch delay characteristic of the first edge of the first signal and a second switch delay characteristic of the second edge of the first signal, wherein the pulse width of the first signal is less than the first switch delay associated with the second signal; varying the pulse width of the first signal; monitoring the second signal; determining a value of the pulse width that defines a boundary of when the second signal is present and when the second signal is not present; and determining a ratio of the value of the pulse width that defines the boundary to the first switch delay and/or the second switch delay, whereby the change in delay induced by the switching history of the circuit to be characterized is a function of the ratio.
Cmos Imager Photodiode With Enhanced Capacitance
US Patent:
7659564, Feb 9, 2010
Filed:
Feb 14, 2006
Appl. No.:
11/276085
Inventors:
James W. Adkisson - Jericho VT, US
John J. Ellis-Monaghan - Grand Isle VT, US
Mark D. Jaffe - Shelburne VT, US
Dale J. Pearson - Bedford Hills NY, US
Dennis L. Rogers - Croton on Hudson NY, US
John J. Ellis-Monaghan - Grand Isle VT, US
Mark D. Jaffe - Shelburne VT, US
Dale J. Pearson - Bedford Hills NY, US
Dennis L. Rogers - Croton on Hudson NY, US
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
H01L 31/04
US Classification:
257293, 257E27133, 257E31038
Abstract:
A pixel sensor cell having a semiconductor substrate having a surface; a photosensitive element formed in a substrate having a non-laterally disposed charge collection region entirely isolated from a physical boundary including the substrate surface. The photosensitive element comprises a trench having sidewalls formed in the substrate of a first conductivity type material; a first doped layer of a second conductivity type material formed adjacent to at least one of the sidewalls; and a second doped layer of the first conductivity type material formed between the first doped layer and the at least one trench sidewall and formed at a surface of the substrate, the second doped layer isolating the first doped layer from the at least one trench sidewall and the substrate surface. In a further embodiment, an additional photosensitive element is provided that includes a laterally disposed charge collection region that contacts the non-laterally disposed charge collection region of the photosensitive element and underlies the doped layer formed at the substrate surface.
Cmos Imager Photodiode With Enhanced Capacitance
US Patent:
8440490, May 14, 2013
Filed:
Nov 3, 2011
Appl. No.:
13/288686
Inventors:
James W. Adkisson - Jericho VT, US
John J. Ellis-Monaghan - Grand Isle VT, US
Mark D. Jaffe - Shelburne VT, US
Dale J. Pearson - Bedford Hills NY, US
Dennis L. Rogers - Carmel NY, US
John J. Ellis-Monaghan - Grand Isle VT, US
Mark D. Jaffe - Shelburne VT, US
Dale J. Pearson - Bedford Hills NY, US
Dennis L. Rogers - Carmel NY, US
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
H01L 31/18
US Classification:
438 57, 257E21131
Abstract:
A method for manufacturing a pixel sensor cell that includes a photosensitive element having a non-laterally disposed charge collection region. The method includes forming a trench recess in a substrate of a first conductivity type material, and filling the trench recess with a material having second conductivity type material. The second conductivity type material is then diffused out of the filled trench material to the substrate region surrounding the trench to form the non-laterally disposed charge collection region. The filled trench material is removed to provide a trench recess, and the trench recess is filled with a material having a first conductivity type material. A surface implant layer is formed at either side of the trench having a first conductivity type material. A collection region of a trench-type photosensitive element is formed of the outdiffused second conductivity type material and is isolated from the substrate surface.
Cmos Imager Photodiode With Enhanced Capacitance
US Patent:
8106432, Jan 31, 2012
Filed:
Dec 10, 2009
Appl. No.:
12/634898
Inventors:
James W. Adkisson - Jericho VT, US
John J. Ellis-Monaghan - Grand Isle VT, US
Mark D. Jaffe - Shelburne VT, US
Dale J. Pearson - Bedford Hills NY, US
Dennis L. Rogers - Carmel NY, US
John J. Ellis-Monaghan - Grand Isle VT, US
Mark D. Jaffe - Shelburne VT, US
Dale J. Pearson - Bedford Hills NY, US
Dennis L. Rogers - Carmel NY, US
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
H01L 31/04
US Classification:
257293, 257E27133, 257E31038
Abstract:
A pixel sensor cell having a semiconductor substrate having a surface; a photosensitive element formed in a substrate having a non-laterally disposed charge collection region entirely isolated from a physical boundary including the substrate surface. The photosensitive element comprises a trench having sidewalls formed in the substrate of a first conductivity type material; a first doped layer of a second conductivity type material formed adjacent to at least one of the sidewalls; and a second doped layer of the first conductivity type material formed between the first doped layer and the at least one trench sidewall and formed at a surface of the substrate, the second doped layer isolating the first doped layer from the at least one trench sidewall and the substrate surface. In a further embodiment, an additional photosensitive element is provided that includes a laterally disposed charge collection region that contacts the non-laterally disposed charge collection region of the photosensitive element and underlies the doped layer formed at the substrate surface.
Methods And Apparatus For Determining A Switching History Time Constant In An Integrated Circuit Device
US Patent:
8027797, Sep 27, 2011
Filed:
Apr 28, 2008
Appl. No.:
12/110639
Inventors:
Manjul Bhushan - Hopewell Junction NY, US
Mark B. Ketchen - Hadley MA, US
Dale J. Pearson - Bedford Hills NY, US
Mark B. Ketchen - Hadley MA, US
Dale J. Pearson - Bedford Hills NY, US
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
G01R 25/00
US Classification:
702 79, 702 64, 702 66, 702 67, 702 69, 702 73
Abstract:
Techniques for inline measurement of a switching history time constant in an integrated circuit device are provided. A series of pulses is launched into a first stage of a delay chain comprising a plurality of delay stages connected in series and having a length greater than a decay length of at least an initial one of the series of pulses, such that the at least initial one of the series of pulses does not appear at a second stage of the delay chain. An amount of time between the launching of the initial one of the series of pulses and the appearance of at least one of the series of pulses at the second stage of the delay chain is determined. The switching history time constant is calculated as a function of a number of stages traversed by the at least one pulse, the determined amount of time, and the decay length of the at least initial one of the series of pulses based at least in part on a switching history of the integrated circuit device.
Planar Array Contact Memory Cards
US Patent:
7863089, Jan 4, 2011
Filed:
Sep 14, 2007
Appl. No.:
11/855325
Inventors:
Paul Coteus - Yorktown NY, US
Kevin C. Gower - LaGrangeville NY, US
Shawn Anthony Hall - Pleasantville NY, US
Gareth Geoffrey Hougham - Ossining NY, US
Dale J. Pearson - Bedford Hills NY, US
Kevin C. Gower - LaGrangeville NY, US
Shawn Anthony Hall - Pleasantville NY, US
Gareth Geoffrey Hougham - Ossining NY, US
Dale J. Pearson - Bedford Hills NY, US
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
H01L 21/44, H01L 21/48, H01L 21/50, H01L 21/82
US Classification:
438106, 438128
Abstract:
A Planar Memory Module (PAMM) device comprising a generally planar card comprising a first side and a second side, the first side having a plurality of couplings and the second side having a plurality of connectors, a plurality of memory devices coupled to the card via a first portion of the plurality of couplings, and at least one hub chip coupled to the card via a second portion of the plurality of couplings. Each of the plurality of couplings is connected to an associated one of the plurality of connectors.
Planar Array Contact Memory Cards
US Patent:
7566959, Jul 28, 2009
Filed:
Sep 14, 2007
Appl. No.:
11/855356
Inventors:
Paul Coteus - Yorktown NY, US
Kevin C. Gower - LaGrangeville NY, US
Shawn Anthony Hall - Pleasantville NY, US
Gareth Geoffrey Hougham - Ossining NY, US
Dale J. Pearson - Bedford Hills NY, US
Kevin C. Gower - LaGrangeville NY, US
Shawn Anthony Hall - Pleasantville NY, US
Gareth Geoffrey Hougham - Ossining NY, US
Dale J. Pearson - Bedford Hills NY, US
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
H01L 23/02, H01L 23/48, H01L 23/10, H01L 23/34
US Classification:
257685
Abstract:
A Planar Memory Module (PAMM) device comprising a generally planar card comprising a first side and a second side, the first side having a plurality of couplings and the second side having a plurality of connectors, a plurality of memory devices coupled to the card via a first portion of the plurality of couplings, and at least one hub chip coupled to the card via a second portion of the plurality of couplings. Each of the plurality of couplings is connected to an associated one of the plurality of connectors.
Planar Array Contact Memory Cards
US Patent:
7282790, Oct 16, 2007
Filed:
Jun 6, 2005
Appl. No.:
11/146495
Inventors:
Paul Coteus - Yorktown NY, US
Kevin C. Gower - LaGrangeville NY, US
Shawn Anthony Hall - Pleasantville NY, US
Dale J. Pearson - Bedford Hills NY, US
Gareth Geoffrey Hougham - Ossining NY, US
Kevin C. Gower - LaGrangeville NY, US
Shawn Anthony Hall - Pleasantville NY, US
Dale J. Pearson - Bedford Hills NY, US
Gareth Geoffrey Hougham - Ossining NY, US
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
H01L 23/02, H01L 23/48, H01L 23/10, H01L 23/34
US Classification:
257685, 257690, 257706, 257727
Abstract:
A Planar Memory Module (PAMM) device comprising a generally planar card comprising a first side and a second side, the first side having a plurality of couplings and the second side having a plurality of connectors, a plurality of memory devices coupled to the card via a first portion of the plurality of couplings, and at least one hub chip coupled to the card via a second portion of the plurality of couplings. Each of the plurality of couplings is connected to an associated one of the plurality of connectors.
Planar Array Contact Memory Cards
US Patent:
8138592, Mar 20, 2012
Filed:
Jun 20, 2008
Appl. No.:
12/142997
Inventors:
Paul Coteus - Yorktown NY, US
Kevin C. Gower - LaGrangeville NY, US
Shawn Anthony Hall - Pleasantville NY, US
Gareth Geoffrey Hougham - Ossining NY, US
Dale J. Pearson - Bedford Hills NY, US
Kevin C. Gower - LaGrangeville NY, US
Shawn Anthony Hall - Pleasantville NY, US
Gareth Geoffrey Hougham - Ossining NY, US
Dale J. Pearson - Bedford Hills NY, US
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
H01L 23/02, H01L 23/48, H01L 23/10, H01L 23/34
US Classification:
257685
Abstract:
A Planar Memory Module (PAMM) device comprising a generally planar card comprising a first side and a second side, the first side having a plurality of couplings and the second side having a plurality of connectors, a plurality of memory devices coupled to the card via a first portion of the plurality of couplings, and at least one hub chip coupled to the card via a second portion of the plurality of couplings. Each of the plurality of couplings is connected to an associated one of the plurality of connectors.
Planar Array Contact Memory Cards
US Patent:
7863091, Jan 4, 2011
Filed:
Jul 2, 2008
Appl. No.:
12/166773
Inventors:
Paul Coteus - Yorktown NY, US
Kevin C. Gower - LaGrangeville NY, US
Shawn Anthony Hall - Pleasantville NY, US
Gareth Geoffrey Hougham - Ossining NY, US
Dale J. Pearson - Bedford Hills NY, US
Kevin C. Gower - LaGrangeville NY, US
Shawn Anthony Hall - Pleasantville NY, US
Gareth Geoffrey Hougham - Ossining NY, US
Dale J. Pearson - Bedford Hills NY, US
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
H01L 21/44, H01L 21/48, H01L 21/50, H01L 21/82
US Classification:
438106, 438128
Abstract:
A Planar Memory Module (PAMM) device comprising a generally planar card comprising a first side and a second side, the first side having a plurality of couplings and the second side having a plurality of connectors, a plurality of memory devices coupled to the card via a first portion of the plurality of couplings, and at least one hub chip coupled to the card via a second portion of the plurality of couplings. Each of the plurality of couplings is connected to an associated one of the plurality of connectors.