CRAIG ARTHUR GAW
Pilots at 81 Pl, Scottsdale, AZ

4989050, Jan 29, 1991

Aug 28, 1989

7/399049

Craig A. Gaw - Scottsdale AZ
Curtis D. Moyer - Phoenix AZ

Motorola, Inc. - Schaumburg IL

H01L 3300

357 17

A light emitting diode is provided comprising a substrate which is transparent to the emitted light upon which a plurality of semiconductor layers, including a quantum well active layer, are formed. The materials are chosen not only for their optical characteristics but also so that many of the layers act as etch stops for layers which are formed on top of them. In addition to operational semiconductor layes which form the light emitting diode, two sacrificial semiconductor layers are formed on the substrate which serve as masks during processing and are removed prior to device metallization. An initial pattern is formed in the uppermost semiconductor layer and is transferred down through lower layers using the etch stop layers and selective etches so that further photolithography steps are unnecessary. Electrodes are formed on one side of the device by conventional metal deposition techniques and are self aligned to the LED junction.

4864370, Sep 5, 1989

Nov 16, 1987

7/122160

Craig A. Gaw - Scottsdale AZ
Daniel L. Rode - St. Louis MO

Motorola, Inc. - Schaumburg IL

H01L 3300

357 17

A high efficiency light emitting diode is achieved through the use of a patterned metal contact. The metal contact is insulated from the structure of the light emitting diode to prevent current flow and subsequent light generation underneath the electrical bond pad. This shifts the drive current out to the patterned portion of the bond pad or metal contact.

5995531, Nov 30, 1999

Nov 4, 1997

8/963624

Craig A. Gaw - Scottsdale AZ
Wenbin Jiang - Phoenix AZ
Benjamin W. Gable - Chandler AZ

Motorola, Inc. - Schaumburg IL

H01S 308, H01L 2120

372 96

A vertical cavity surface emitting laser with polarization control includes a first stack of distributed Bragg reflectors positioned on a substrate with an active region including a first cladding region and a second cladding region positioned on opposite sides of an active area overlying the first stack of distributed Bragg reflectors A second stack of distributed Bragg reflectors is positioned on the active region. The second stack has an ion implantation region formed to control and define a lasing threshold of the laser. The second stack further is formed into a ridge with the ridge being etched into the ion implantation region to form an elongated shape so as to polarize light emitted by the second stack of distributed Bragg reflectors.

5838705, Nov 17, 1998

Nov 4, 1996

8/743288

Wenbin Jiang - Phoenix AZ
Paul Claisse - Gilbert AZ
Craig A. Gaw - Scottsdale AZ

Motorola, Inc. - Schaumburg IL

H01S 319, H01S 308, H01L 3300

372 45

A first stack (112) of distributed Bragg reflectors, a first cladding region (114) disposed on the first stack of distributed Bragg reflectors (112) and including a defect inhibition layer (117) an active area (122) disposed on the first cladding region (114), a second cladding region (132) disposed on the active area (122) and including a defective inhibition layer (136), and a second stack (140) of distributed Bragg reflectors disposed on the second cladding region (132). The defect inhibition layers (117, 136) substantially prevent defects in the active area (122).

5939773, Aug 17, 1999

Aug 5, 1996

8/692355

Wenbin Jiang - Phoenix AZ
Michael S. Lebby - Apache Junction AZ
Craig A. Gaw - Scottsdale AZ

Motorola, Inc. - Schaumburg IL

H01L 23495, H01L 2302, H01L 2328

257666

A semiconductor laser package including a laser chip mounted to a leadframe, and a plastic resin housing for encapsulating the laser chip. The laser chip composed of a vertical cavity surface emitting laser and a photodetector. The vertical cavity surface emitting laser generating an emission along a path. The leadframe being positioned a fixed distance from an emission window formed in the plastic resin housing. The laser chip mounted in precise z-axis alignment from the emission window utilizing the leadframe as a dimensional reference point, with the bump height compensating for variations in laser chip dimension. An optical element is optionally positioned in the path to reflect a portion of the emission.

5358880, Oct 25, 1994

Apr 12, 1993

8/044787

Michael S. Lebby - Apache Junction AZ
Craig A. Gaw - Scottsdale AZ

Motorola, Inc. - Schaumburg IL

H01L 21265

437 23

A method of manufacturing a closed cavity LED including forming, on a substrate, a short cavity LED with electrically conductive layers on opposite ends. Depositing a transparent conductive layer of material over one electrically conductive layer and affixing glass or a diamond film over the transparent conductive layer to define and protect a light output area. Removing the substrate and covering the top and sides of the cavity with dielectric material and contact metal. The metal being in contact with the transparent conductive layer and the other electrical contact layer. Thus, a reflector covers the cavity in all directions except the light output area to increase external efficiency.

5256580, Oct 26, 1993

Apr 6, 1992

7/864101

Craig A. Gaw - Scottsdale AZ
Ronald W. Slocumb - Scottsdale AZ
Curtis D. Moyer - Phoenix AZ

Motorola, Inc. - Schaumburg IL

H01L 2120, H01L 21265

437 23

An optical semiconductor device is formed by using one controlled etch to form a "T" shaped contact structure on the device (20). The etch rate is controlled by judicious selection of materials to provide a cladding layer (17) that has a predetermined etch rate in hydrofluoric acid, a support layer (10) and a contact layer (18) that are not affected by hydrofluoric acid, a lift-off layer (19) that is dissolved by hydrofluoric acid, and a barrier layer (21). Dissolving of the lift-off layer (19) facilitates removing the barrier layer (21).

5270245, Dec 14, 1993

Nov 27, 1992

7/982525

Craig A. Gaw - Scottsdale AZ

Motorola, Inc. - Schaumburg IL

H01L 2120, H01L 21203

437127

A method of forming a III-V semiconductor device (10, 20) utilizes a III-V semiconductor substrate (11) having a plurality of III-V semiconductor layers (12, 14, 15, 16, 17). A pattern layer ( 19, 24) is formed on the plurality of layers (12, 14, 15, 16, 17). The plurality of III-V semiconductor layers (12, 14, 15, 16, 17) is etched with an isotropic etch that does not etch the pattern layer (19, 24). The isotropic etch undercuts the pattern layer (19, 24) and exposes an area for forming ohmic contacts on the plurality of III-V semiconductor layers. The pattern layer (19, 24) is used as a mask while depositing ohmic contact material (22, 23, 28) onto the area for forming ohmic contacts.

5237633, Aug 17, 1993

Nov 14, 1991

7/791708

Craig A. Gaw - Scottsdale AZ
Paige M. Holm - Phoenix AZ
George W. Rhyne - Scottsdale AZ
Daniel L. Rode - St. Louis MO

Motorola, Inc. - Schaumburg IL

G02B 612

385 14

A monolithic optoelectronic integrated circuit having an optical emission portion (18) and a drive portion (11, or 22 and 21). The drive portion is capable of accepting TTL and standard CMOS logic voltage levels. In a first embodiment, the monolithic optoelectronic integrated circuit (10) has a light emitting diode (18) driven by a dual gate FET (11). In a second embodiment, the monolithic optoelectronic integrated circuit (20) has a light emitting diode (18) driven by two FETs (22 and 21). In each embodiment (10 or 20), a gate (13 or 23) of the respective drive circuit accepts the TTL or standard CMOS logic voltage. Further, in each embodiment current limiting is accomplished by coupling a gate with the source of the FET (11 or 22). Thus, the output of the light emitting diode (18, 18) is controlled by an input signal to the drive circuit.

5574744, Nov 12, 1996

Feb 3, 1995

8/383151

Craig A. Gaw - Scottsdale AZ
Michael S. Lebby - Apache Junction AZ

Motorola - Schaumburg IL

H01S 318

372 50

A substrate having a first surface and a second surface, the first surface having a vertical cavity surface emitting laser disposed therein and second surface having a photodetector integrated disposed therein, wherein the vertical cavity surface emitting laser directs a light signal toward the photodetector.