MR. CHARLES SIDNEY TSAI
Marriage and Family Therapists at Rosemead Blvd, El Monte, CA
License number
California 68288
Category
Marriage and Family Therapists
Type
Marriage & Family Therapist
Address
Address
2
3208 Rosemead Blvd, El Monte, CA 91731
148 E Longden Ave, Arcadia, CA 91006
148 E Longden Ave, Arcadia, CA 91006
Phone
(626) 227-7001
(626) 524-3450
(626) 524-3450
Professional information
Bonded Intermediate Substrate And Method Of Making Same
US Patent:
8101498, Jan 24, 2012
Filed:
Apr 21, 2006
Appl. No.:
11/408239
Inventors:
Thomas Henry Pinnington - Pasadena CA, US
James M. Zahler - Pasadena CA, US
Young-Bae Park - Arcadia CA, US
Charles Tsai - Arcadia CA, US
Corinne Ladous - Pasadena CA, US
Sean Olson - Santa Monica CA, US
James M. Zahler - Pasadena CA, US
Young-Bae Park - Arcadia CA, US
Charles Tsai - Arcadia CA, US
Corinne Ladous - Pasadena CA, US
Sean Olson - Santa Monica CA, US
International Classification:
H01L 21/30, H01L 21/46
US Classification:
438455, 438458, 438459, 257617
Abstract:
An intermediate substrate includes a handle substrate bonded to a thin layer suitable for epitaxial growth of a compound semiconductor layer, such as a III-nitride semiconductor layer. The handle substrate may be a metal or metal alloy substrate, such as a molybdenum or molybdenum alloy substrate, while the thin layer may be a sapphire layer. A method of making the intermediate substrate includes forming a weak interface in the source substrate, bonding the source substrate to the handle substrate, and exfoliating the thin layer from the source substrate such that the thin layer remains bonded to the handle substrate.
Processes And Structures For Epitaxial Growth On Laminate Substrates
US Patent:
2007024, Oct 18, 2007
Filed:
Apr 13, 2007
Appl. No.:
11/785038
Inventors:
Thomas Pinnington - Pasadena CA, US
Sean Olson - Santa Monica CA, US
James M. Zahler - Pasadena CA, US
Charles Tsai - Arcadia CA, US
Sean Olson - Santa Monica CA, US
James M. Zahler - Pasadena CA, US
Charles Tsai - Arcadia CA, US
International Classification:
H01L 21/3205, H01L 21/28, H01L 21/4763
US Classification:
438603, 438604, 438624, 438688
Abstract:
A method of making a semiconductor device includes providing a laminate substrate made by bonding a II-VI or III-V semiconductor laminate film to a support substrate, and preparing the laminate film to enable growth of a II-VI or III-V semiconductor device layer on the laminate substrate.