CHARLES R COOK
Medical Practice at 39 Way, West Palm Beach, FL

4056415, Nov 1, 1977

Jul 15, 1976

5/705632

Charles R. Cook - North Palm Beach FL
Aung San U - West Palm Beach FL
Raymond E. Scherrer - West Palm Beach FL

International Telephone and Telegraph Corporation - Nutley NJ

H01L 2120

148187

An integrated circuit having dielectric isolation is fabricated by growing a double epitaxial layer of N-type semiconductive material onto a P-type substrate. A dielectric layer is formed over the epitaxial layer and thereafter the dielectric and a portion of the epitaxial growth are removed in selected isolation regions to expose the semiconductive material. A dielectric is formed by anodizing the N-type semiconductive material in the selected isolation regions to provide electrical isolation between the remaining portions of the epitaxial growth. Base and emitter elements are formed in the conventional manner to complete the integrated circuit which is thereafter packaged.

4005452, Jan 25, 1977

Nov 15, 1974

5/524296

Charles R. Cook - North Palm Beach FL

International Telephone and Telegraph Corporation - Nutley NJ

H01L 2712

357 49

An integrated circuit having dielectric isolation is fabricated by growing a double epitaxial layer of N-type semiconductive material onto a P-type substrate. A dielectric layer is formed over the epitaxial layer and thereafter the dielectric and the epitaxial growth are removed in selected isolation regions to expose the substrate. A metal layer is evaporated onto the device so that metal is deposited both on the exposed substrate material and on the dielectric layer. A dielectric is formed by selectively anodizing the metal deposited on the exposed substrate to provide electrical isolation between the remaining portions of the epitaxial growth. Because of the electrical insulating characteristics of the dielectric layer, the metal deposited on the dielectric layer is not anodized and may be removed using a compound that attacks the unanodized metal and has little effect on the anodized metal. Base and emitter elements are formed in the conventional manner to complete the integrated circuit.

4081823, Mar 28, 1978

Jun 23, 1976

5/699000

Charles R. Cook - North Palm Beach FL

International Telephone and Telegraph Corporation - Nutley NJ

H01L 2702, H01L 2712, H01L 2704

357 47

An integrated circuit having dielectric isolation is fabricated by growing a double epitaxial layer of N-type semiconductive material onto a P-type substrate. A dielectric layer is formed over the epitaxial layer and thereafter the dielectric and the epitaxial growth are removed in selected isolation regions to expose the substrate. A metal layer is evaporated onto the device so that metal is deposited both on the exposed substrate material and on the dielectric layer. A dielectric is formed by selectively anodizing the metal deposited on the exposed substrate to provide electrical isolation between the remaining portions of the epitaxial growth. Because of the electrical insulating characteristics of the dielectric layer, the metal deposited on the dielectric layer is not anodized and may be removed using a compound that attacks the unanodized metal and has little effect on the anodized metal. Base and emitter elements are formed in the conventional manner to complete the integrated circuit.

4056681, Nov 1, 1977

Aug 4, 1975

5/601854

Charles R. Cook - North Palm Beach FL

International Telephone and Telegraph Corporation - Nutley NJ

H05K 500

174 52FP

A self-aligning integrated circuit package includes an integrated circuit die having raised contact pads mounted to an interconnecting die in flip chip fashion. The interconnecting die is formed of anodizable material and has raised anodized portions that form guide means for aligning the integrated circuit die and the leads of a lead frame so that they are positioned over conductive portions of the interconnecting die which connect the contact pads of the integrated circuit to the leads of the lead frame.

4096619, Jun 27, 1978

Jan 31, 1977

5/764095

Charles R. Cook - North Palm Beach FL

International Telephone & Telegraph Corporation - Nutley NJ

B23P 1700

29413

This relates to the scribing and breaking of a semiconductor wafer into individual dies by anodizing the silicon in regions corresponding to the die boundaries. The regions are selectively anodized, and the anodization is continued until the anodized silicon extends into the semiconductor wafer to a depth that allows easy breakage when the wafer is stressed. To facilitate breakage, the anodized silicon may be removed with hydrofluoric acid.