CHARLES CURTIS GOLDSMITH
Pilots at Scott Ct, Poughkeepsie, NY

6361627, Mar 26, 2002

May 11, 2000

09/569483

Patrick W. DeHaven - Poughkeepsie NY
Charles C. Goldsmith - Poughkeepsie NY
Jeffery L. Hurd - late of Marlboro NY
Suryanarayana Kaja - Hopewell Junction NY
Michele S. Legere - Walden NY
Eric D. Perfecto - Poughkeepsie NY

International Business Machines Corporation - Armonk NY

C12D 604

148517, 148518, 148577, 205223, 205224

A process for controlling grain growth in the microstructure of thin metal films (e. g. , copper or gold) deposited onto a substrate. In one embodiment, the metal film is deposited onto the substrate to form a film having a fine-grained microstructure. The film is heated in a temperature range of 70-100°C. for at least five minutes, wherein the fine-grained microstructure is converted into a stable large-grained microstructure. In another embodiment, the plated film is stored, after the step of depositing, at a temperature not greater than -20° C. , wherein the fine-grained microstructure is stabilized without grain growth for the entire storage period.

6805974, Oct 19, 2004

Feb 15, 2002

10/078020

Won K. Choi - Mount Kisco NY
Charles C. Goldsmith - Poughkeepsie NY
Timothy A. Gosselin - Apalachin NY
Donald W. Henderson - Ithaca NY
Sung K. Kang - Chappaqua NY
Da-Yuan Shih - Poughkeepsie NY

International Business Machines Corporation - Armonk NY

B23K 3526

428646, 428647, 428648, 420560, 420557, 420561, 257780, 257738, 22818022, 228563

A solder composition and associated method of formation. The solder composition comprises a substantially lead-free alloy that includes tin (Sn), silver (Ag), and copper. The tin has a weight percent concentration in the alloy of at least about 90%. The silver has a weight percent concentration X in the alloy. X is sufficiently small that formation of Ag Sn plates is substantially suppressed when the alloy in a liquefied state is being solidified by being cooled to a lower temperature at which the solid Sn phase is nucleated. This lower temperature corresponds to an undercooling T relative to the eutectic melting temperature of the alloy. Alternatively, X may be about 4. 0% or less, wherein the liquefied alloy is cooled at a cooling rate that is high enough to substantially suppress Ag Sn plate formation in the alloy. The copper has a weight percent concentration in the alloy not exceeding about 1. 5%.

6638374, Oct 28, 2003

Jan 16, 2002

10/050285

Patrick W. DeHaven - Poughkeepsie NY
Charles C. Goldsmith - Poughkeepsie NY
Jeffery L. Hurd - late of Marlboro NY
Suryanarayana Kaja - Hopewell Junction NY
Michele S. Legere - Walden NY
Eric D. Perfecto - Poughkeepsie NY

International Business Machines Corporation - Armonk NY

B32B 1502

148432, 428606, 428671, 428674

A process for controlling grain growth in the microstructure of thin metal films (e. g. , copper or gold) deposited onto a substrate. In one embodiment, the metal film is deposited onto the substrate to form a film having a fine-grained microstructure. The film is heated in a temperature range of 70-100° C. for at least five minutes, wherein the fine-grained microstructure is converted into a stable large-grained microstructure. In another embodiment, the plated film is stored, after the step of depositing, at a temperature not greater than -20° C. , wherein the fine-grained microstructure is stabilized without grain growth for the entire storage period.

2005010, May 19, 2005

Nov 14, 2003

10/707021

James Bartelo - Endicott NY, US
Tien-Jen Cheng - Bedford NY, US
David Eichstadt - North Salem NY, US
Charles Goldsmith - Poughkeepsie NY, US
Jonathan Griffith - LaGrangeville NY, US
Donald Henderson - Ithaca NY, US
Roger Quon - Rhinebeck NY, US
Stephen Kilpatrick - Olney MD, US

INTERNATIONAL BUSINESS MACHINES CORPORATION - ARMONK NY

H01L023/48

257737000

Disclosed is an improved integrated circuit structure that has internal circuitry and interconnects (e.g. C4, etc.) on an external portion of the structure. With the invention, these interconnects have a metal layer on the external portion of the structure, a first copper layer on the metal layer, a barrier layer on the copper layer, a stabilizing copper layer on the barrier layer, and a tin-based solder bump on the barrier layer. The stabilizing copper layer has a sufficient amount of copper to balance the chemical potential gradient of copper across the barrier layer and prevent copper within the first copper layer from diffusing across the barrier layer. Alternatively, a sufficient amount of copper can be included within the tin-based solder bump to prevent copper from diffusing across the barrier layer. Thus, the tin-based solder bump comprises a copper rich solder alloy.

7875806, Jan 25, 2011

Feb 16, 2010

12/706418

Muta G. Farooq - Hopewell Junction NY, US
Charles C. Goldsmith - Poughkeepsie NY, US

International Business Machines Corporation - Armonk NY

H05K 1/09

174257, 29843, 257737

Methods of forming and assemblies having hybrid interconnection grid arrays composed of a homogenous mixture of Pb-free solder joints and Pb-containing solder paste on corresponding sites of a printed board. The aligned Pb-free solder joints and Pb-containing solders are heated to a temperature above a melting point of the Pb-free solder joint for a sufficient time to allow complete melting of both the Pb-free solder joints and Pb-containing solder paste and the homogenous mixing thereof during assembly. These molten materials mix together such that the Pb from the Pb-containing solder disperses throughout substantially the entire Pb-free solder joint for complete homogenization of the molten materials to form the homogenous hybrid interconnect structures of the invention.

7731077, Jun 8, 2010

Jun 7, 2007

11/759298

Mukta G Farooq - Hopewell Junction NY, US
Charles C Goldsmith - Poughkeepsie NY, US

International Business Machines Corporation - Armonk NY

B23K 31/02

22818022, 2282481

Methods of forming and assemblies having hybrid interconnection grid arrays composed of a homogenous mixture of Pb-free solder joints and Pb-containing solder paste on corresponding sites of a printed board. The aligned Pb-free solder joints and Pb-containing solders are heated to a temperature above a melting point of the Pb-free solder joint for a sufficient time to allow complete melting of both the Pb-free solder joints and Pb-containing solder paste and the homogenous mixing thereof during assembly. These molten materials mix together such that the Pb from the Pb-containing solder disperses throughout substantially the entire Pb-free solder joint for complete homogenization of the molten materials to form the homogenous hybrid interconnect structures of the invention.

5876795, Mar 2, 1999

May 21, 1997

8/861473

Charles Curtis Goldsmith - Poughkeepsie NY
Thomas Lester Nunes - Wappingers Falls NY

International Business Machines Corporation - Armonk NY

B05D 302

427226

A process for producing a low-stress electrolessly deposited layer of nickel yielding a clean nickel film and having a wettable surface is described. Diffusion is performed in a non-oxidizing environment, using a gas mixture containing nitrogen. The diffusion temperature is optimally set at a temperature of at least 500. degree. C. , i. e. , at least 150. degree. C. below typical prior art diffusion temperatures. The presence of nitrogen during diffusion changes the direction of the outgoing born away from the surface of the film, and eliminates the requirement that the nickel film be plated on refractory metal that contains glass, which was previously required to provide a media for the boron to diffuse into it for its subsequent removal.

7037559, May 2, 2006

May 1, 2003

10/426725

Emanuel I. Cooper - Scarsdale NY, US
Charles C. Goldsmith - Poughkeepsie NY, US
Stephen Kilpatrick - Lagrangeville NY, US
Carmen M. Mojica - Dorado PR, US

International Business Machines Corporation - Armonk NY

C25D 3/54, C22C 12/00, B05D 1/18, B05D 7/17, B05D 7/21

427437, 4274431, 420562, 420557, 428615, 428646, 428620, 428936

A first metal is plated onto a substrate comprising a second metal by immersing the substrate into a bath comprising a compound of the first metal and an organic diluent. The second metal is more electropositive than the first metal. The organic diluent has a boiling point higher than a eutectic point in a phase diagram of the first and second metals. The bath is operated above the eutectic point but below the melting point of the second metal. For example, bismuth is immersion plated onto lead-free tin-based solder balls, and subsequently redistributed by fluxless reflow. Plated structures are also provided.

8420537, Apr 16, 2013

May 28, 2008

12/127878

Kaushik Chanda - Fishkill NY, US
Ronald G. Filippi - Wappingers Falls NY, US
Charles C. Goldsmith - Poughkeepsie NY, US
Ping-Chuan Wang - Hopewell Junction NY, US
Chih-Chao Yang - Glenmont NY, US

International Business Machines Corporation - Armonk NY

H01L 21/302, B44C 1/22

438692, 438689, 438693, 216 88, 216 89

Recrystallization and grain growth of metal, such as Cu, is achieved at higher anneal temperatures of 150° C. to 400° C. , for example, for short anneal times of five to sixty minutes by forming a metal stress locking layer on the Cu before anneal and chemical-mechanical polishing. The stress locking layer extends the elastic region of the Cu by suppressing atom diffusion to the free surface, resulting in near zero tensile stress at room temperature after anneal. Stress voiding, which creates reliability problems, is thereby avoided. Improved grain size and texture are also achieved. The stress locking layer is removed after anneal by chemical-mechanical polishing leaving the Cu interconnect with low stress and improved grain size and texture.

6126761, Oct 3, 2000

Jun 10, 1998

9/095253

Patrick W. DeHaven - Poughkeepsie NY
Charles C. Goldsmith - Poughkeepsie NY
Jeffrey L. Hurd - late of Marlboro NY
Suryanarayana Kaja - Hopewell Junction NY
Michele S. Legere - Walden NY
Eric D. Perfecto - Poughkeepsie NY

International Business Machines Corporation - Armonk NY

C25D 550

148518

A process for controlling grain growth in the microstructure of thin metal films (e. g. , copper or gold) deposited onto a substrate. In one embodiment, the metal film is deposited onto the substrate to form a film having a fine-grained microstructure. The film is heated in a temperature range of 70-100. degree. C. for at least five minutes, wherein the fine-grained microstructure is converted into a stable large-grained microstructure. In another embodiment, the plated film is stored, after the step of depositing, at a temperature not greater than -20. degree. C. , wherein the fine-grained microstructure is stabilized without grain growth for the entire storage period.