Calvin Michael Curtis
Engineers at Monaco Pkwy, Denver, CO

License number
Colorado 64065
Issued Date
Jan 16, 2008
Renew Date
Jan 16, 2008
Expiration Date
Dec 29, 2014
Type
Engineer Intern
Address
Address
1050 S Monaco Pkwy UNIT 121, Denver, CO 80224
LicenseFiles verified this license of Dec 9, 2016 at the Colorado - Department of Regulatory Agencies.

Professional information

Calvin Curtis Photo 1

Structural Designer At Ev Studio
Position:
Structural Designer at EV Studio
Location:
Greater Denver Area
Industry:
Construction
Work:
EV Studio - Denver, CO since Jul 2012 - Structural Designer KLG Corporation Post-Tensioning and Engineering Solutions Feb 2007 - Jan 2011 - Senior Project Coordinator Suncoast Post-Tension Feb 2006 - Feb 2007 - Project Coordinator Front Range Community College Feb 2005 - Aug 2005 - IT Technician
Education:
Harvey Mudd College 2000 - 2004
BS, Engineering
Certifications:
Engineer Intern, Colorado Department of Regulatory Agencies, State Board of Licensure for Architects, Professional Engineers and Professional Land Surveyors

Calvin Curtis Photo 2

Calvin Curtis - Denver, CO
Work:
KLG Corporation - Centennial, CO
Senior Project Coordinator Suncoast Post-Tension, LP - Centennial, CO
Project Coordinator Front Range Community College - Westminster, CO
Information Technology Technician I
Education:
Harvey Mudd College - Claremont, CA
BS in Engineering
Skills:
AutoCAD, RAM Concept, Excel, Word, Windows, Linux, Adapt FELT, Project Management, Construction Estimating, Construction Management, MATLAB, LabVIEW, Lathe Operator, Mill Operator

Calvin Curtis Photo 3

Direct Printing Of Thin-Film Conductors Using Metal-Chelate Inks

US Patent:
6830778, Dec 14, 2004
Filed:
Mar 21, 2002
Appl. No.:
10/088760
Inventors:
Douglas L. Schulz - Billerica MA
Calvin J. Curtis - Lakewood CO
David S. Ginley - Evergreen CO
Assignee:
Midwest Research Institute - Kansas City MO
International Classification:
B05D 512
US Classification:
427123, 427125, 427226, 427229
Abstract:
A process for forming an electrical conductor on a substrate is provided, consisting essentially of providing an ink comprised of a metallic chelate, printing directly thereon the ink, and decomposing the ink wherein the metal-chelate is converted to a solid metal conductor on the substrate.

Calvin Curtis Photo 4

Multilayer Heterostructures And Their Manufacture

US Patent:
2011022, Sep 15, 2011
Filed:
Mar 15, 2011
Appl. No.:
13/048251
Inventors:
Scott R. Hammond - Golden CO, US
Matthew Reese - Golden CO, US
Benjamin Rupert - Berkeley CA, US
Alexander Miedaner - Boulder CO, US
Calvin Curtis - Golden CO, US
Dana Olson - Golden CO, US
David S. Ginley - Evergreen CO, US
Assignee:
Alliance for Sustainable Energy, LLC - Boulder CO
International Classification:
B32B 9/04, B05D 3/00, B05D 3/02, B05D 1/38, B05D 1/36, B32B 27/06, B82Y 40/00
US Classification:
428448, 4273722, 4274071, 428702, 977892
Abstract:
A method of synthesizing multilayer heterostructures including an inorganic oxide layer residing on a solid substrate is described. Exemplary embodiments include producing an inorganic oxide layer on a solid substrate by a liquid coating process under relatively mild conditions. The relatively mild conditions include temperatures below 225° C. and pressures above 9.4 mb. In an exemplary embodiment, a solution of diethyl aluminum ethoxide in anhydrous diglyme is applied to a flexible solid substrate by slot-die coating at ambient atmospheric pressure, and the diglyme removed by evaporation. An AlOlayer is formed by subjecting material remaining on the solid substrate to a relatively mild oven temperature of approximately 150° C. The resulting AlOlayer exhibits relatively high light transmittance and relatively low vapor transmission rates for water. An exemplary embodiment of a flexible solid substrate is polyethylene napthalate (PEN). The PEN is not substantially adversely affected by exposure to 150° C.

Calvin Curtis Photo 5

Fabrication Of Contacts For Silicon Solar Cells Including Printing Burn Through Layers

US Patent:
2010030, Dec 2, 2010
Filed:
Nov 3, 2008
Appl. No.:
12/745400
Inventors:
David S. Ginley - Evergreen CO, US
Tatiana Kaydanova - Montreal, CA
Alexander Miedaner - Boulder CO, US
Calvin J. Curtis - Lakewood CO, US
Marinus Franciscus Antonius Maria van Hest - Lakewood CO, US
Assignee:
ALLIANCE FOR SUSTAINABLE ENERGY, LLC - Golden CO
International Classification:
H01L 31/0224, H01L 31/18, H01L 21/3205
US Classification:
136256, 438 98, 438608, 257E31124, 257E21295
Abstract:
A method for fabricating a contact () for a solar cell (). The method includes providing a solar cell substrate () with a surface that is covered or includes an antireflective coating (). For example, the substrate () may be positioned adjacent or proximate to an outlet of an inkjet printer () or other deposition device. The method continues with forming a burn through layer () on the coating () by depositing a metal oxide precursor (e.g., using an inkjet or other non-contact printing method to print or apply a volume of liquid or solution containing the precursor). The method includes forming a contact layer () comprising silver over or on the burn through layer (), and then annealing is performed to electrically connect the contact layer () to the surface of the solar cell substrate () through a portion of the burn through layer () and the coating ().

Calvin Curtis Photo 6

Methods Of Making Copper Selenium Precursor Compositions With A Targeted Copper Selenide Content And Precursor Compositions And Thin Films Resulting Therefrom

US Patent:
8021641, Sep 20, 2011
Filed:
Feb 4, 2010
Appl. No.:
12/658204
Inventors:
Calvin J. Curtis - Lakewood CO, US
Alexander Miedaner - Boulder CO, US
Marinus Franciscus Antonius Maria van Hest - Lakewood CO, US
David S. Ginley - Evergreen CO, US
Jennifer Leisch - Denver CO, US
Matthew Taylor - West Simsbury CT, US
Billy J. Stanbery - Austin TX, US
Assignee:
Alliance for Sustainable Energy, LLC - Golden CO
Heliovolt Corporation - Austin TX
International Classification:
B05D 3/02, B32B 9/00, C01B 19/04, H01L 31/00
US Classification:
423508, 423509, 4273766, 428689, 136264
Abstract:
Precursor compositions containing copper and selenium suitable for deposition on a substrate to form thin films suitable for semi-conductor applications. Methods of forming the precursor compositions using primary amine solvents and methods of forming the thin films wherein the selection of temperature and duration of heating controls the formation of a targeted species of copper selenide.

Calvin Curtis Photo 7

Printing Aluminum Films And Patterned Contacts Using Organometallic Precursor Inks

US Patent:
2010020, Aug 19, 2010
Filed:
Nov 3, 2008
Appl. No.:
12/678647
Inventors:
Calvin J. Curtis - Lakewood CO, US
Alexander Miedaner - Boulder CO, US
Marinus Franciscus Antonius Maria van Hest - Lakewood CO, US
David S. Ginley - Evergreen CO, US
Assignee:
Alliance for Sustainable Energy, LLC - Golden CO
International Classification:
B05D 5/12
US Classification:
427 74, 427123
Abstract:
A method () for depositing an aluminum film or contact (). The method includes providing () a substrate () with a surface for receiving the aluminum film (). The substrate () is heated () to a printing temperature such as over 150° C., and the method () includes depositing () a volume of ink upon a surface of the substrate (). The ink () includes an organometallic aluminum complex or precursor, and the substrate surface temperature is selected or high enough to decompose the organometallic aluminum complex or precursor to provide aluminum of the film () and a gaseous byproduct. The depositing or printing () of the ink may be performed within an inert or substantially oxygen-free atmosphere (). The ink () may be a solution of the organometallic aluminum complex and a solvent. The aluminum complex or precursor may include an amine compound and alane.

Calvin Curtis Photo 8

Preparation Of A Semiconductor Thin Film

US Patent:
5711803, Jan 27, 1998
Filed:
Sep 29, 1995
Appl. No.:
8/536348
Inventors:
Martin Pehnt - TuBingen, DE
Douglas L. Schulz - Denver CO
Calvin J. Curtis - Lakewood CO
David S. Ginley - Evergreen CO
Assignee:
Midwest Research Institute - Kansas City MO
International Classification:
C03B 102
US Classification:
117 4
Abstract:
A process for the preparation of a semiconductor film. The process comprises depositing nanoparticles of a semiconductor material onto a substrate whose surface temperature during nanoparticle deposition thereon is sufficient to cause substantially simultaneous fusion of the nanoparticles to thereby coalesce with each other and effectuate film growth.

Calvin Curtis Photo 9

Formation Of Copper-Indium-Selenide And/Or Copper-Indium-Gallium-Selenide Films From Indium Selenide And Copper Selenide Precursors

US Patent:
8057850, Nov 15, 2011
Filed:
Nov 9, 2006
Appl. No.:
11/813474
Inventors:
Calvin J. Curtis - Lakewood CO, US
Alexander Miedaner - Boulder CO, US
Maikel Van Hest - Lakewood CO, US
David S. Ginley - Evergreen CO, US
Jennifer A. Nekuda - Lakewood CO, US
Assignee:
Alliance for Sustainable Energy, LLC - Golden CO
International Classification:
B05D 5/06, B05D 3/02
US Classification:
427 74, 427226
Abstract:
Liquid-based indium selenide and copper selenide precursors, including copper-organoselenides, particulate copper selenide suspensions, copper selenide ethylene diamine in liquid solvent, nanoparticulate indium selenide suspensions, and indium selenide ethylene diamine coordination compounds in solvent, are used to form crystalline copper-indium-selenide, and/or copper indium gallium selenide films () on substrates ().

Calvin Curtis Photo 10

Solution Synthesis Of Mixed-Metal Chalcogenide Nanoparticles And Spray Deposition Of Precursor Films

US Patent:
6126740, Oct 3, 2000
Filed:
Jan 27, 1998
Appl. No.:
9/014326
Inventors:
Douglas L. Schulz - Denver CO
Calvin J. Curtis - Lakewood CO
David S. Ginley - Evergreen CO
Assignee:
Midwest Research Institute - Kansas City MO
International Classification:
C30B 102
US Classification:
117 4
Abstract:
A colloidal suspension comprising metal chalcogenide nanoparticles and a volatile capping agent. The colloidal suspension is made by reacting a metal salt with a chalcogenide salt in an organic solvent to precipitate a metal chalcogenide, recovering the metal chalcogenide, and admixing the metal chalcogenide with a volatile capping agent. The colloidal suspension is spray deposited onto a substrate to produce a semiconductor precursor film which is substantially free of impurities.

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