DR. C. ALLEN CHU, MD,PHD
Medical Practice in Houston, TX
License number
Texas K7002
Category
Medical Practice
Type
Specialist
Address
Address
15655 Cypress Woods Medical Dr SUITE 400, Houston, TX 77014
Phone
(281) 537-0171
(281) 537-5144 (Fax)
(281) 537-5144 (Fax)
Professional information
Halogen-Assisted Chemical Vapor Deposition Of Diamond
US Patent:
5071677, Dec 10, 1991
Filed:
May 24, 1990
Appl. No.:
7/528804
Inventors:
Donald E. Patterson - Houston TX
Robert H. Hauge - Houston TX
C. Judith Chu - Houston TX
John L. Margrave - Houston TX
Robert H. Hauge - Houston TX
C. Judith Chu - Houston TX
John L. Margrave - Houston TX
Assignee:
Houston Advanced Research Center - The Woodlands TX
International Classification:
C23C 1626, C23C 1646
US Classification:
427249
Abstract:
The present invention is directed to a method for depositing diamond films and particles on a variety of substrates by flowing a gas or gas mixture capable of supplying (1) carbon, (2) hydrogen and (3) a halogen through a reactor over the substrate material. The reactant gases may be pre-mixed with an inert gas in order to keep the overall gas mixture composition low in volume percent of carbon and rich in hydrogen. Pre-treatment of the reactant gases to a high energy state is not required as it is in most prior art processes for chemical vapor deposition of diamond. Since pre-treatment is not required, the process may be applied to substrates of virtually any desired size, shape or configuration.
The reactant gas mixture preferably is passed through a reactor, a first portion of which is heated to a temperature of from about 400. degree. C. to about 920. degree. C.
Halogen-Assisted Chemical Vapor Deposition Of Diamond
US Patent:
5316795, May 31, 1994
Filed:
May 7, 1991
Appl. No.:
7/696769
Inventors:
Donald E. Patterson - Houston TX
Robert H. Hauge - Houston TX
C. Judith Chu - Houston TX
John L. Margrave - Houston TX
Robert H. Hauge - Houston TX
C. Judith Chu - Houston TX
John L. Margrave - Houston TX
Assignee:
Houston Advanced Research Center - The Woodlands TX
International Classification:
C23C 1600
US Classification:
427249
Abstract:
The present invention is directed to a method for depositing diamond films and particles on a variety of substrates by flowing a gas or gas mixture capable of supplying (1) carbon, (2) hydrogen, (3) a halogen and, preferably, (4) a chalcogen through a reactor over the substrate material. The reactant gases may be premixed with an inert gas in order to keep the overall gas mixture composition low in volume percent of carbon and rich in hydrogen. Pre-treatment of the reactant gases to a high energy state is not required as it is in most prior art processes for chemical vapor deposition of diamond. Since pretreatment is not required, the process may be applied to substrates of virtually any desired size, shape or configuration.