DR. BIN YANG, MD
Medical Practice at Ten Broek Ct, Bridgewater, NJ
License number
New Jersey 5638502-1205
Category
Medical Practice
Type
Occupational Medicine
Address
Address
30 Ten Broek Ct, Bridgewater, NJ 08807
Phone
(973) 676-1000
Professional information
Iii-V Power Field Effect Transistors
US Patent:
7537984, May 26, 2009
Filed:
Dec 19, 2006
Appl. No.:
11/641507
Inventors:
Jeff D. Bude - Danville CA, US
Peide Ye - High Bridge NJ, US
Kwok K. Ng - Warren NJ, US
Bin Yang - Bridgewater NJ, US
Peide Ye - High Bridge NJ, US
Kwok K. Ng - Warren NJ, US
Bin Yang - Bridgewater NJ, US
Assignee:
Agere Systems Inc. - Allentown PA
International Classification:
H01L 21/338
US Classification:
438167, 438454, 438572, 257E21451
Abstract:
A field effect transistor configured for use in high power applications and a method for its fabrication is disclosed. The field effect transistor is formed of III-V materials and is configured to have a breakdown voltage that is advantageous for high power applications. The field effect transistor is so configured by determining the operating voltage and the desired breakdown voltage for that operating voltage. A peak electric field is then identified that is associated with the operating voltage and desired breakdown voltage. The device is then configured to exhibit the identified peak electric field at that operating voltage. The device is so configured by selecting device features that control the electrical potential in the device drift region is achieved. These features include the use of an overlapping gate or field plate in conjunction with a barrier layer overlying the device channel, or a p-type pocket formed in a region of single-crystal III-V material formed under the device channel. The overlapping gate/field plate or p-type pocket extend into the drift region of the device, controlling the electrical potential of the device in a manner that provides the desired control of the electrical potential in the drift region.
Iii-V Power Field Effect Transistors
US Patent:
7180103, Feb 20, 2007
Filed:
Sep 24, 2004
Appl. No.:
10/948897
Inventors:
Jeff D. Bude - New Providence NJ, US
Peide Ye - High Bridge NJ, US
Kwok K. Ng - Warren NJ, US
Bin Yang - Bridgewater NJ, US
Peide Ye - High Bridge NJ, US
Kwok K. Ng - Warren NJ, US
Bin Yang - Bridgewater NJ, US
Assignee:
Agere Systems Inc. - Allentown PA
International Classification:
H01L 29/739, H01L 31/0328, H01L 31/0336, H01L 31/072, H01L 31/109
US Classification:
257200, 257 11, 257189, 257201
Abstract:
A field effect transistor configured for use in high power applications and a method for its fabrication is disclosed. The field effect transistor is formed of III-V materials and is configured to have a breakdown voltage that is advantageous for high power applications. The field effect transistor is so configured by determining the operating voltage and the desired breakdown voltage for that operating voltage. A peak electric field is then identified that is associated with the operating voltage and desired breakdown voltage. The device is then configured to exhibit the identified peak electric field at that operating voltage. The device is so configured by selecting device features that control the electrical potential in the device drift region is achieved. These features include the use of an overlapping gate or field plate in conjunction with a barrier layer overlying the device channel, or a p-type pocket formed in a region of single-crystal III-V material formed under the device channel. The overlapping gate/field plate or p-type pocket extend into the drift region of the device, controlling the electrical potential of the device in a manner that provides the desired control of the electrical potential in the drift region.