BHARAT BHUSHAN
Engineers in Delaware
License number
Pennsylvania PE030421E
Category
Engineers
Type
Professional Engineer
Address
Address
3
Delaware
Powell, OH 43065
Pennsylvania
Powell, OH 43065
Pennsylvania
Personal information
See more information about BHARAT BHUSHAN at radaris.comName
Address
Phone
8725 Saint George Dr, Holland, OH 43528
802 Wildflower Dr, Wilkes Barre, PA 18702
10235 Widdington Close, Powell, OH 43065
111 Eagle Ct, Wilkes Barre, PA 18706
111 Eagle Rd, Wilkes Barre, PA 18706
Professional information
Liquid Dielectric Capacitor For Film Thickness Mapping, Measurement Methods Using Same
US Patent:
6504386, Jan 7, 2003
Filed:
Oct 21, 1999
Appl. No.:
09/422376
Inventors:
Bharat Bhushan - Powell OH
Christopher D. Hahm - Roy UT
Christopher D. Hahm - Roy UT
Assignee:
The Ohio State University - Columbus OH
International Classification:
G01R 2726
US Classification:
324671, 324658, 324663, 324699, 369 5341
Abstract:
The present invention includes capacitive film thickness measurement devices and measurement systems used in machines or instruments. A capacitance measurement device and technique useful in determining lubricant film thickness on substrates such as magnetic thin-film rigid disks. Using the present invention, variations in lubricant thickness on the Angstrom scale or less may be measured quickly and nondestructively.
Capacitance Devices For Film Thickness Mapping, Measurement Methods Using Same
US Patent:
6459280, Oct 1, 2002
Filed:
Jul 20, 2000
Appl. No.:
09/619831
Inventors:
Bharat Bhushan - Powell OH
Christopher D. Hahm - Roy UT
Christopher D. Hahm - Roy UT
Assignee:
The Ohio State University - Columbus OH
International Classification:
G01R 2726
US Classification:
324671, 324662, 324663, 324658, 324686
Abstract:
The present invention includes capacitive film thickness measurement devices and measurement systems. The invention also includes machines or instruments using those aspects of the invention. The present invention additionally includes methods and procedures using those devices of the present invention. The present invention discloses a capacitance measurement device and technique useful in determining lubricant film thickness on substrates such as magnetic thin-film rigid disks. Also disclosed is a device and technique for determining film thickness by suspending the film in a liquid dielectric. Using the present invention, variations in lubricant thickness on the Angstrom scale or less may be measured quickly and nondestructively.
Method For Measuring Film Thickness Using Capacitance Technique
US Patent:
6756791, Jun 29, 2004
Filed:
Jun 7, 2002
Appl. No.:
10/165497
Inventors:
Bharat Bhushan - Powell OH
Christopher D. Hahm - Roy UT
Christopher D. Hahm - Roy UT
Assignee:
The Ohio State University - Columbus OH
International Classification:
G01R 2726
US Classification:
324671, 324658, 324662, 324761, 324229, 369 531
Abstract:
The present invention includes capacitive film thickness measurement devices and measurement systems. The invention also includes machines or instruments using those aspects of the invention. The present invention additionally includes methods and procedures using those devices of the present invention. The present invention discloses a capacitance measurement device and technique useful in determining lubricant film thickness on substrates such as magnetic thin-film rigid disks. Using the present invention, variations in lubricant thickness on the Angstrom scale or less may be measured quickly and nondestructively.
Method Of Texturing A Magnetic Recording Medium For Optimum Skewness And Kurtosis To Reduce Friction With A Magnetic Head
US Patent:
5737229, Apr 7, 1998
Filed:
Nov 7, 1995
Appl. No.:
8/554776
Inventors:
Bharat Bhushan - Powell OH
Assignee:
The Ohio State University - Columbus OH
International Classification:
G11B 584
US Classification:
36446824
Abstract:
A low friction non-gaussian surface is disclosed which has a positive skewness value and a kurtosis value of three or greater which minimizes static and kinetic friction and resultant wear. In a preferred embodiment, a magnetic storage media having an optimal non-gaussian surface roughness and method of surface parameter selection utilizes non-gaussian probability density functions in a contact model which accounts for the effects of roughness distribution and liquid film meniscus forces to determine optimum skewness and kurtosis values which minimize static and kinetic friction. The invention provides a magnetic storage media with a surface which has a positive skewness value and as high a kurtosis value as possible which minimizes static and kinetic friction at the disk/head interface and minimizes wear of the magnetic storage device.
Surfaces Having Optimized Skewness And Kurtosis Parameters For Reduced Static And Kinetic Friction
US Patent:
6007896, Dec 28, 1999
Filed:
Apr 6, 1998
Appl. No.:
9/055615
Inventors:
Bharat Bhushan - Powell OH
Assignee:
The Ohio State University - Columbus OH
International Classification:
G11B 370
US Classification:
428141
Abstract:
A low friction non-gaussian surface is disclosed which has a positive skewness value and a kurtosis value of three or greater which minimizes static and kinetic friction and resultant wear in any instance of at least two surfaces in moving contact, including machine and computer components, magnetic media, and read/write heads which contact magnetic media. In a preferred embodiment, a magnetic media having an optimal non-gaussian surface roughness and method of surface parameter selection utilizes non-gaussian probability density functions in a contact model which accounts for the effects of roughness distribution and liquid film meniscus forces to determine optimum skewness and kurtosis values which minimize static and kinetic friction. The invention provides a magnetic media or other article of manufacture with a surface which has a positive skewness value and as high a kurtosis value as possible which minimizes or reduces static and kinetic friction and wear upon contact with another surface which may also be surface configured in accordance with the invention.
Method For Measuring Nm-Scale Tip-Sample Capacitance
US Patent:
7023220, Apr 4, 2006
Filed:
Oct 19, 2004
Appl. No.:
10/967930
Inventors:
Jonathan P. Pelz - Columbus OH, US
David T. Lee - Dublin OH, US
Bharat Bhushan - Powell OH, US
David T. Lee - Dublin OH, US
Bharat Bhushan - Powell OH, US
Assignee:
The Ohio State University - Columbus OH
International Classification:
G01R 27/26
US Classification:
324658, 324684, 324690
Abstract:
A method for measuring nm-scale tip-sample capacitance including (a) measuring a cantilever deflection and a change in probe-sample capacitance relative to a reference level as a function of a probe assembly height; (b) fitting out-of-contact data to a function; (c) subtracting the function from capacitance data to get a residual capacitance as a function of the probe assembly height; and (d) determining the residual capacitance at a z-position where the cantilever deflection is zero.
Direct, Low Frequency Capacitance Measurement For Scanning Capacitance Microscopy
US Patent:
6856145, Feb 15, 2005
Filed:
Dec 6, 2002
Appl. No.:
10/313431
Inventors:
Jonathan P. Pelz - Columbus OH, US
David T. Lee - Dublin OH, US
Bharat Bhushan - Powell OH, US
David T. Lee - Dublin OH, US
Bharat Bhushan - Powell OH, US
Assignee:
The Ohio State University - Columbus OH
International Classification:
G01R027/26
US Classification:
324663, 324658
Abstract:
A system and method for measuring capacitance between a probe and a semiconductor sample, which may be useful in the field of scanning capacitance microscopy (SCM). The present invention also includes a method for analyzing measured capacitance data by subtracting any changes in capacitance that are due to changes in long-range stray capacitance that occur when the probe assembly is scanned.
Hierarchical Structures For Superhydrophobic Surfaces And Methods Of Making
US Patent:
2010002, Feb 4, 2010
Filed:
Sep 22, 2008
Appl. No.:
12/234900
Inventors:
Bharat Bhushan - Powell OH, US
Yong Chae Jung - Columbus OH, US
Michael Nosonovsky - Kew Gardens NY, US
Yong Chae Jung - Columbus OH, US
Michael Nosonovsky - Kew Gardens NY, US
Assignee:
THE OHIO STATE UNIVERSITY - Columbus OH
International Classification:
B32B 3/26, B05D 5/00
US Classification:
428156, 427258, 977890
Abstract:
Embodiments of a superhydrophobic structure comprise a substrate and a hierarchical surface structure disposed on at least one surface of the substrate, wherein the hierarchical surface structure comprises a microstructure comprising a plurality of microasperities disposed in a spaced geometric pattern on at least one surface of the substrate. The fraction of the surface area of the substrate covered by the microasperities is from between about 0.1 to about 1. The hierarchical structure comprises a nanostructure comprising a plurality of nanoasperities disposed on at least one surface of the microstructure.
Hydrophobic Surface With Geometric Roughness Pattern
US Patent:
2006007, Apr 13, 2006
Filed:
Mar 31, 2005
Appl. No.:
11/094867
Inventors:
Bharat Bhushan - Powell OH, US
Michael Nosonovsky - Kew Gardens NY, US
Michael Nosonovsky - Kew Gardens NY, US
International Classification:
B32B 5/16
US Classification:
428323000
Abstract:
A hydrophobic surface comprising a substrate and a roughened surface structure oriented on the substrate material is provided. The substrate comprises a surface, which is at least partially hydrophobic with a contact angle to liquid of 90° or greater. The roughened surface structure comprises a plurality of asperities arranged in a geometric pattern according to a roughness factor, wherein the roughness factor is characterized by a packing parameter p that equals the fraction of the surface area of the substrate covered by the asperities. The p parameter has a value from between about 0.5 to about 1.
Hierarchical Structures For Superhydrophobic Surfaces And Methods Of Making
US Patent:
8137751, Mar 20, 2012
Filed:
Apr 1, 2011
Appl. No.:
13/078296
Inventors:
Bharat Bhushan - Powell OH, US
Yong Chae Jung - Columbus OH, US
Michael Nosonovsky - Kew Gardens NY, US
Yong Chae Jung - Columbus OH, US
Michael Nosonovsky - Kew Gardens NY, US
Assignee:
The Ohio State University - Columbus OH
International Classification:
B05D 1/36
US Classification:
427265, 428141, 428172, 427256, 427258, 427287, 264225, 264400
Abstract:
Embodiments of methods of making superhydrophobic structures comprise depositing a polymer mold onto a silicon surface comprising a plurality of microasperities, removing the polymer mold after the polymer mold has hardened, depositing a liquid epoxy resin into the polymer mold, forming a microstructure with a plurality of microasperities by separating the epoxy resin from the mold after the epoxy resin has solidified, and forming a superhydrophobic structure by depositing a plurality of alkane nanoasperities on the microstructure in the presence of solvent vapor.