BENJAMIN C HUI
Broker in Peabody, MA

4734514, Mar 29, 1988

Feb 10, 1986

6/828467

Andreas A. Melas - Burlington MA
Benjamin C. Hui - Peabody MA
Jorg Lorberth - Weimar-Niederweimar, DE

Morton Thiokol, Inc. - Chicago IL

C07F 970

556 70

Organometallic compounds having the formulas: ##STR1## wherein N is selected from phosphorus and arsenic, H is hydride, and X and Y are independently selected from hydride, lower alkyl cyclopentadienyl, and phenyl, except that Y cannot be hydrogen; and MR. sub. x wherein x is an integer from 2 to 4 inclusive, each said R substituent is independently selected from hydride, lower alkyl, phenyl, alkyl-substituted phenyl, cyclopentadienyl, and alkyl-substituted cyclopentadienyl, and M is selected from elements of Groups 2B, 2A, 3A, 5A, and 6A of the Periodic Table, except carbon, nitrogen, oxygen, and sulfur. The use of these compounds in chemical vapor deposition processes and methods for synthesizing these compounds are also disclosed.

4720560, Jan 19, 1988

Oct 25, 1984

6/664645

Benjamin C. Hui - Peabody MA
Jorg Lorberth - Weimar-Niederweimar, DE
Andreas A. Melas - Burlington MA

Morton Thiokol, Inc. - Chicago IL

C07F 500

556 1

Compounds having the molecular formula: MR. sub. x wherein x is an integer from 2 to 4 inclusive, each said R substituent is independently selected from hydride, lower alkyl, phenyl, alkyl-substituted phenyl, cyclopentadienyl, and alkyl substituted cyclopentadienyl, at least two of said R substituents are different, and M is an element selected from Groups 2B or 3A of the Periodic Table, Bismuth, Selenium, Tellurium, Beryllium, and Magnesium, but excluding Aluminum, Bismuth, Selenium, and Tellurium if any R is hydride. The hybrid compound is used for metal organic chemical vapor deposition. The invention also includes a metal organic chemical vapor deposition process employing a hybrid of first and second compounds having the above formula, but wherein the R substituents of each compound can be like or unlike and M is selected from Groups 2B, 2A, 3A, 5A, and 6A of the Periodic Table except for Carbon, Nitrogen, Oxygen, and Sulfur. The hybrid composite compound has different properties than the first and second compounds, and thus can be more suitable for a particular metal organic chemical vapor deposition process.

4847399, Jul 11, 1989

Jan 23, 1987

7/006392

Robert B. Hallock - Newburyport NH
Stephen J. Manzik - Plaiston NH
Thomas Mitchell - Millis MA
Benjamin C. Hui - Peabody MA

Morton Thiokol, Inc. - Chicago IL

C07F 500, C07F 506

556 1

Methods for forming or purifying organometallic compounds of elements of Group III-A of the Periodic Table. An intermediate compound is formed which is an adduct of the desired organometallic compound and a Group I-A or Group II-A compound. The adduct is nonvolatile, so volatile impurities are removed from the adduct by distillation. The adduct is decomposed to release the volatile organometallic compound, which is then distilled away from the nonvolatile remainder of the adduct. The method can be used to produce organometallic compounds which are substantially free of volatile metallic compounds and complexed solvents. A method of separating volatile Group II-B impurities from volatile Group III-A compounds is also disclosed.

4897500, Jan 30, 1990

Apr 12, 1989

7/336953

Benjamin C. Hui - Peabody MA
Luis I. Victoriano - Danvers MA

CVD Incorporated - Woburn MA

C07F 500, C07F 506

556187

Waste material containing substantial amounts of Li(MH. sub. 3 R) compounds where M is Al or Ga are deactivated by dissolving and/or dispersing the waste material in a solvent in which ionic deactivation products are soluble and then adding a carbonyl-containing compound which reacts with the Li(MH. sub. 3 R) compound.

4999223, Mar 12, 1991

Feb 22, 1990

7/484720

Ravi K. Kanjolia - North Andover MA
Benjamin C. Hui - Peabody MA

CVD Incorporated - Woburn MA

B05D 512, C23C 1618, C23C 1630

427252

A MOCVD process for depositing an arsenic-containing film utilizes an organoarsine compound having at least one As-As bond, in particular, diarsines and compounds having arsenic rings of 5 or 6 arsenic atoms.

5068372, Nov 26, 1991

Jul 16, 1990

7/556787

Ravindra K. Kanjolia - North Andover MA
Benjamin C. Hui - Peabody MA

CVD Incorporated - Woburn MA

C07F 966

556 70

Disclosed is a method for producing, from an aqueous basic composition, a primary arsine having one hydrocarbyl group bonded directly to As, the basic composition having been obtained from the combination of components comprising an alkali metal arsenite and a reactive hydrocarbyl halide by combining the aqueous composition with an acidic, nascent hydrogen-generating reducing agent to produce the primary arsine directly from the aqueous composition without isolation of the primary arsonic acid intermediate.

4301129, Nov 17, 1981

Nov 12, 1980

6/206242

Robert C. Wade - Ipswich MA
Benjamin C. Hui - Peabody MA

Thiokol Corporation - Newtown PA

C01B 615, C07F 502

423284

A process for the preparation of compounds of the formula RBH. sub. 3 CN wherein R is an alkali metal, a quaternary ammonium radical or a phosphonium radical wherein a compound of the formula RCN is treated with a stoichiometric amount or slightly less than a stoichiometric amount of a BH. sub. 3 donor is described. The final products are useful as hydrolysis stable reductants and as synthetic intermediates.

4942252, Jul 17, 1990

Aug 16, 1988

7/232729

Benjamin C. Hui - Peabody MA
Jorg Lorberth - Weimar-Niederweimar, DE

CVD Incorporated - Woburn MA

C07F 972, C07F 950

556 70

Method for synthesizing alkyl halides of phosphorus, arsenic, or antimony from the corresponding phosphorus, arsenic, or antimony alkyl and phosphorus, arsenic, or antimony halide. An improved synthesis of alkyl phosphorus or arsenic hydrides from the corresponding alkyl phosphorus, arsenic, or antimony halides is also disclosed.

4924019, May 8, 1990

Jan 18, 1989

7/298845

Benjamin C. Hui - Peabody MA
Luis I. Victoriano - Danvers MA

CVD Incorporated - Woburn MA

C07F 506

556187

The waste product from the synthesis of trimethylgallium is reacted with a hydride selected from an alkali metal hydride, a group IIIA hydride, or a group III hydride to produce dimethylaluminum hydride of high purity.

5502227, Mar 26, 1996

Jul 27, 1993

8/097821

Ravindra K. Kanjolia - North Andover MA
Benjamin C. Hui - Peabody MA

CVD, Incorporated - Woburn MA

C07F 500

556 1

A uniform dosimetry of vapor phase trimethylindium is provided by dissolving trimethylindium in a C. sub. 3 -C. sub. 5 trialkylindium and bubbling an inert carrier gas through the solution.