ANTHONY NICHOLAS CARUSO
Pilots at 79 Ter, Overland Park, KS

License number
Kansas A3998180
Issued Date
Jul 2014
Expiration Date
Jul 2019
Category
Airmen
Type
Authorized Aircraft Instructor
Address
Address
6414 W 79Th Ter, Overland Park, KS 66204

Professional information

Anthony Caruso Photo 1

Apparatus And Method For Directional And Spectral Analysis Of Neutrons

US Patent:
2012014, Jun 14, 2012
Filed:
Aug 20, 2010
Appl. No.:
13/391585
Inventors:
Anthony Caruso - Overland Park KS, US
James C. Petrosky - Fairborn OH, US
John W. McClory - Dayton OH, US
Peter Arnold Dowben - Crete NE, US
William Miller - Rocheport MO, US
Thomas Oakes - Jefferson City MO, US
Abigail Bickley - Fairborn OH, US
Assignee:
THE CURATORS OF THE UNIVERSITY OF MISSOURI - Columbia MO
The Board of Regents of the University of Nebraska - Lincoln NE
The United States Air Force Intellectual Property Law Division - Wright-Patterson AFB OH
International Classification:
G01T 3/08, G01T 3/00
US Classification:
376154, 25039007, 25037005, 250391
Abstract:
A neutron detection system may include a volume of neutron moderating material, and a plurality of solid state neutron detection devices disposed within the volume of neutron moderating material, wherein some of the neutron detection devices suitable for transduction of primary reaction products resulting from a neutron interaction event, wherein some of the solid state neutron detection devices include two or more solid state neutron detection elements, and wherein the solid state neutron detection elements are configured for omnidirectional detection of impinging neutrons.


Anthony Caruso Photo 2

Amorphous Boron Carbide Films For P-N Junctions And Method For Fabricating Same

US Patent:
8237161, Aug 7, 2012
Filed:
Aug 10, 2010
Appl. No.:
12/853857
Inventors:
Anthony N. Caruso - Overland Park KS, US
Joseph A. Sandstrom - Moorhead MN, US
David A. Bunzow - Fremont CA, US
Assignee:
North Dakota State University Research Foundation - Fargo ND
International Classification:
H01L 29/04
US Classification:
257 52, 257 53, 257 55, 257200, 257E33004
Abstract:
Amorphous semiconductor films with enhanced charged carrier transport are disclosed. Also disclosed is a method for fabricating and treating the film to produce the enhanced transport. Also disclosed are semiconductor p-n junctions fabricated with the films which demonstrate the enhanced transport. The films are amorphous and include boron, carbon, and hydrogen.