ANDREW THOMAS BARFKNECHT
Pilots at Oak Grv Ave, Menlo Park, CA

6777263, Aug 17, 2004

Aug 21, 2003

10/647040

Qing Gan - Fremont CA
Richard C. Ruby - Menlo Park CA
Frank S. Geefay - Cupertino CA
Andrew T. Barfknecht - Menlo Park CA

Agilent Technologies, Inc. - Palo Alto CA

H01L 2144

438106, 438640, 438455, 438612, 438107, 438123, 257704, 257417, 257457, 257678

A method for forming a wafer package includes forming a die structure, wherein the die structure includes a first wafer, a device mounted on the first wafer, a second wafer mounted atop the first wafer with a first seal ring around the device and a second seal ring around a via contact. The method further includes forming a trench in the second wafer around the first seal ring, filling the trench and the via contact with a sealing agent, patterning a topside of the second wafer to removed the excessive sealing agent and to expose a contact pad of the via contact, and singulating a die around the first seal ring.

6777267, Aug 17, 2004

Nov 1, 2002

10/286729

Richard C. Ruby - Menlo Park CA
Frank S. Geefay - Cupertino CA
Cheol Hyun Han - Fremont CA
Qing Gan - Fremont CA
Andrew T. Barfknecht - Menlo Park CA

Agilent Technologies, Inc. - Palo Alto CA

H01L 2144

438113, 438460

A method for separating dies on a wafer includes etching channels around the dies on a first side of the wafer, mounting the first side of the wafer to a quartz plate with an UV adhesive, and grinding a second side of the wafer until the channels are exposed on the second side of the wafer. At this point, the dies are separated but held together by the UV adhesive on the quartz plate. The method further includes mounting a second side of the wafer to a tack tape, exposing UV radiation through the quartz plate to the UV adhesive. At this point, the UV adhesive looses its adhesion so the dies are held together by the tack tape. The method further includes dismounting the quartz plate from the first side of the wafer and picking up the individual dies from the tack tape.

6528814, Mar 4, 2003

Sep 14, 1999

09/395590

Matthias Frank - Oakland CA
Carl A. Mears - Windsor CA
Simon E. Labov - Berkeley CA
Larry J. Hiller - Livermore CA
Andrew T. Barfknecht - Menlo Park CA

The Regents of the University of California - Oakland CA

H01L 2906

257 30

A cryogenic, high-resolution X-ray detector with high count rate capability has been invented. The new X-ray detector is based on superconducting tunnel junctions (STJs), and operates without thermal stabilization at or below 500 mK. The X-ray detector exhibits good resolution (˜5-20 eV FWHM) for soft X-rays in the keV region, and is capable of counting at count rates of more than 20,000 counts per second (cps). Simple, FET-based charge amplifiers, current amplifiers, or conventional spectroscopy shaping amplifiers can provide the electronic readout of this X-ray detector.

6165801, Dec 26, 2000

Nov 18, 1999

9/443245

Michael J. Burns - Mountain View CA
Paul R. de la Houssaye - San Diego CA
Graham A. Garcia - San Diego CA
Stephen D. Russell - San Diego CA
Stanley R. Clayton - San Diego CA
Andrew T. Barfknecht - Menlo Park CA

The United States of America as represented by the Secretary of the Navy - Washington DC

H01L 2100

438 2

A method for the fabrication of active semiconductor and high-temperature perconducting devices on the same substrate to form a monolithically integrated semiconductor-superconductor (MISS) structure is disclosed. A common insulating substrate, preferably sapphire or yttria-stabilized zirconia, is used for deposition of semiconductor and high-temperature superconductor substructures. Both substructures are capable of operation at a common temperature of at least 77 K. The separate semiconductor and superconductive regions may be electrically interconnected by normal metals, refractory metal silicides, or superconductors. Circuits and devices formed in the resulting MISS structures display operating characteristics which are equivalent to those of circuits and devices prepared on separate substrates.

6051846, Apr 18, 2000

Apr 1, 1993

8/041737

Michael J. Burns - Mountain View CA
Paul R. de la Houssaye - San Diego CA
Graham A. Garcia - San Diego CA
Stephen D. Russell - San Diego CA
Stanley R. Clayton - San Diego CA
Andrew T. Barfknecht - Menlo Park CA

The United States of America as represented by the Secretary of the Navy - Washington DC

H01L 2906, H01L 310256, H01L 3922, H01L 3300

257 35

A method for the fabrication of active semiconductor and high-temperature superconducting device of the same substrate to form a monolithically integrated semiconductor-superconductor (MISS) structure is disclosed. A common insulating substrate, preferably sapphire or yttria-stabilized zirconia, is used for deposition of semiconductor and high-temperature superconductor substructures. Both substructures are capable of operation at a common temperature of at least 77 K. The separate semiconductor and superconductive regions may be electrically interconnected by normal metals, refractory metal silicides, or superconductors. Circuits and devices formed in the resulting MISS structures display operating characteristics which are equivalent to those of circuits and devices prepared on separate substrates.