ANDREW J DAVIS
Social Work in Boston, MA

License number
Massachusetts 300183
Issued Date
Feb 23, 1981
Expiration Date
Oct 1, 2000
Type
Licensed Social Worker
Address
Address
Boston, MA 02135
LicenseFiles verified this license of Nov 25, 2016 at the Mass.gov - Consumer Affairs and Business Regulation.

Professional information

Andrew Davis Photo 1

A Bright Media &Amp; Marketing Mind
Position:
Author at Brandscaping, Guest Lecturer Media Ventures Program at Boston University College of Communications, Professional Speaker at Monumental Shift
Location:
Greater Boston Area
Industry:
Marketing and Advertising
Work:
Brandscaping - Greater Boston Area since Sep 2012 - Author Boston University College of Communications - Greater Boston Area since Oct 2012 - Guest Lecturer Media Ventures Program Monumental Shift since Jun 2008 - Professional Speaker
Skills:
Prezi, Public Speaking, Speaking Engagements, Interactive Development, Television, Advertising, Video Production, Radio, Broadcast, Production, Video, Television Production, Film, Post Production, Video Editing, Film Production, Documentaries, Marketing Strategy, Interactive Programming, Marketing, Social Media, Content Strategy, Integrated Marketing, Digital Marketing, E-commerce, Digital Media, Strategy, Brand Development, Publishing, Digital Strategy, Social Media Marketing, Dynamic Speaker, Strategic Leadership, Persuasive Speaker, Email Marketing, Direct Marketing, Motivational Speaking, Engaging Speaker, National Speaker, Start-ups
Awards:
2012 Visionary of the Year
Niche Media
Top 100 Marketing Books
Amazon
Brandscaping: Unleashing the Power of Partnerships cracks the Top 100 Marketing books on Amazon.com

Andrew Davis Photo 2

Bv Investment Partners (Formerly Boston Ventures)
Position:
Managing Director at BV Investment Partners
Location:
Greater Boston Area
Industry:
Venture Capital & Private Equity
Work:
BV Investment Partners since Feb 1996 - Managing Director Lehman Brothers Jul 1994 - Feb 1996 - Associate Bear, Stearns & Co Inc. Jun 1989 - Aug 1992 - Financial Analyst
Education:
Northwestern University - Kellogg School of Management 1992 - 1994
MBA, Finance University of Michigan 1985 - 1989
BA, Economics

Andrew Davis Photo 3

Owner, Overall Llc
Position:
Managing Partner at Overall Capital Partners
Location:
Greater Boston Area
Industry:
Investment Management
Work:
Overall Capital Partners - Boston, MA since 2008 - Managing Partner Sowood Capital Management 2005 - 2007 - Managing Director Harvard Management Company 2002 - 2004 - Analyst
Education:
Harvard Business School 2000 - 2002
MBA Princeton University 1993 - 1997
AB, WWS St. Louis Country Day School 1989 - 1993
High School

Andrew Davis Photo 4

Director Of Registration, Barista, Coffee Master
Position:
Director of Registration at Anime Boston, Barista at Starbucks
Location:
Greater Boston Area
Industry:
Higher Education
Work:
Anime Boston since Feb 2010 - Director of Registration Starbucks since Dec 2012 - Barista Starbucks Coffee Company Feb 2009 - Dec 2012 - Shift Supervisor Sherwood Middle School, Town of Shrewbury, Massachusetts Sep 2009 - Feb 2011 - Extended Day Teacher Dunkin' Brands May 2006 - Nov 2008 - Shift Leader
Education:
Nichols College 2009 - 2012
Bachelors, Accounting and HRM
Skills:
Inventory Management, Loss Prevention, Time Management, Customer Service, Retail, Coffee, Restaurants, Store Management, Process Scheduler, Food & Beverage, Data Entry, Leadership, Training, Merchandising, Profit, Inventory Control, Income Statement, Food, Employee Training, Customer Satisfaction

Andrew Davis Photo 5

Senior Software Engineer At Ibm
Position:
Senior Software Engineer at IBM
Location:
Greater Boston Area
Industry:
Computer Software
Work:
IBM since Jun 2003 - Senior Software Engineer
Education:
Cornell University 1998 - 2003
Masters of Engineering, Computer Science Cornell University 1998 - 2003
Bachelors, Electrical and Computer Engineering
Skills:
Java, Eclipse, WebSphere Application Server, XML, JavaScript, Software Engineering, Agile Methodologies, Dojo, WebSphere Portal, Tomcat, REST, C++, Architecture, Software Development, SQL

Andrew Davis Photo 6

Andrew Davis
Location:
Greater Boston Area
Industry:
Photography
Skills:
Photography, Portrait Photography, Wedding Photography, InDesign, Dreamweaver, Project Management, Web Standards, Digital Photography, Commercial Photography, Photoshop, Image Manipulation, Lightroom, Graphic Design, Event Photography, Weddings, Portraits, Photos, Art, Advertising, Fine Art Photography

Andrew Davis Photo 7

Method For Obtaining A Sulfur-Passivated Semiconductor Surface

US Patent:
6380097, Apr 30, 2002
Filed:
May 11, 1998
Appl. No.:
09/075553
Inventors:
Helen M. Dauplaise - Brockton MA
Andrew Davis - Boston MA
Kenneth Vaccaro - Acton MA
Joseph P. Lorenzo - Stow MA
Assignee:
The United States of America as represented by the Secretary of the Air Force - Washington DC
International Classification:
H01L 213063
US Classification:
438745, 438750, 438753, 438754
Abstract:
An aqueous thiourea-ammonia treatment is used to form a thin sulfurous film at the indium phosphide surface, having a thickness of less than one nanometer. The thiourea-ammonium hydroxide treatment can be used as is or immediately prior to deposition of cadmium sulfide for enhanced surface passivation. The thiourea-ammonium hydroxide treatment is entirely compatible with chemical bath deposition, molecular beam epitaxy, or metalorganic chemical vapor deposition of the cadmium sulfide.

Andrew Davis Photo 8

Transparent Ohmic Contacts For Schottky Diode Optical Detectors On Thin And Inverted Epitaxial Layers

US Patent:
5639673, Jun 17, 1997
Filed:
Jun 8, 1995
Appl. No.:
8/486442
Inventors:
Kenneth Vaccaro - Acton MA
Eric A. Martin - Medford MA
Stephen M. Spaziani - Nashua NH
Andrew Davis - Boston MA
Assignee:
The United States of America as represented by the Secretary of the Air
Force - Washington DC
International Classification:
H01L 3116
US Classification:
437 5
Abstract:
An InP buffer layer is first formed upon an InP substrate; a thin layer of heavily doped InGaAs, a thick layer of light absorbing InGaAs, and a thin layer of InAlAs are thereafter sequentially grown upon the InP buffer layer. A light reflective Schottky barrier metallic layer is then applied to the InAlAs layer and the resulting device is inverted and affixed to a newly provided substrate, to thus shield and protect the sensitive Schottky contact. The InP substrate layers are thereafter removed and the now exposed thin, heavily doped InGaAs layer is coated with a transparent, electrically conductive layer of Indium-tin-oxide.

Andrew Davis Photo 9

Cadmium Sulfide Layers For Indium Phosphide-Based Heterojunction Bipolar Transistors

US Patent:
6049099, Apr 11, 2000
Filed:
May 11, 1998
Appl. No.:
9/075435
Inventors:
Kenneth Vaccaro - Acton MA
Helen M. Dauplaise - Brockton MA
Andrew Davis - Boston MA
Joseph P. Lorenzo - Stow MA
Assignee:
The United States of America as represented by the Secretary of the Air
Force - Washington DC
International Classification:
H01L 310328
US Classification:
257200
Abstract:
A novel indium phosphide (InP) based heterojunction bipolar transistor (HBT) is described. A II-VI compound, cadmium sulfide (CdS), is used as the emitter to improve the emitter injection efficiency and reduce recombination losses. The cadmium sulfide emitter is applied following the epitaxial growth of III-V compound collector and base regions. The large valence band discontinuity (. quadrature. E=0. 75 eV) between CdS and InP allows InP to be used for both the base and collector material. Prior to cadmium sulfide deposition, the exposed surfaces of the epitaxial layers can be passivated with sulfur, further reducing the recombination losses.

Andrew Davis Photo 10

Cadmium Sulfide Interface Layers For Improving Iii-V Semiconductor Device Performance And Characteristics

US Patent:
5689125, Nov 18, 1997
Filed:
Jun 12, 1995
Appl. No.:
8/489601
Inventors:
Kenneth Vaccaro - Acton MA
Andrew Davis - Boston MA
Helen M. Dauplaise - Brockton MA
Joseph P. Lorenzo - Stow MA
Assignee:
The United States of America as represented by the Secretary of the Air
Force - Washington DC
International Classification:
H01L 29778, H01L 310328
US Classification:
257200
Abstract:
In a Schottky metal junction semiconductor device, a CdS interface layer, having a thickness of under 100 angstroms, is positioned under the Schottky barrier gate of a III-V HEMT, for reducing gate leakage, and for enabling full depletion of the conducting channel. A similar layer is positioned under the insulator of an MIS device having an InP substrate. The CdS layers are deposited from a chemical bath which merely entails a simple, safe and readily controllable additional step in the otherwise conventional manufacturing process of these devices.

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