ANDREW B SCHMITT, MD
Marriage and Family Therapists at Fish Hatchery Rd, Madison, WI

License number
Wisconsin 60166-20
Category
Osteopathic Medicine
Type
Family Medicine
Address
Address
1313 Fish Hatchery Rd, Madison, WI 53715
Phone
(608) 252-8000
(608) 252-8245 (Fax)

Professional information

Andrew B Schmitt Photo 1

Dr. Andrew B Schmitt, Madison WI - MD (Doctor of Medicine)

Specialties:
Family Medicine
Address:
1100 Delaplaine Ct, Madison 53715
VERONA FAMILY MEDICAL CLINIC
100 N Nine Mound Rd, Verona 53593
(608) 845-9531 (Phone), (608) 845-8684 (Fax)
Languages:
English
Education:
Medical School
Upstate Medical University/ College of Health Professions
Graduated: 2011


Andrew Schmitt Photo 2

Metal Silicide Nanowires And Methods Of Their Production

US Patent:
8395265, Mar 12, 2013
Filed:
Jul 2, 2010
Appl. No.:
12/829665
Inventors:
Song Jin - Madison WI, US
Andrew L. Schmitt - Madison WI, US
Yipu Song - Madison WI, US
Assignee:
Wisconsin Alumni Research Foundation - Madison WI
International Classification:
H01L 23/52
US Classification:
257757, 257E23072, 257E33063, 977762
Abstract:
The present invention provides metal silicide nanowires, including metallic, semiconducting, and ferromagnetic semiconducting transition metal silicide nanowires. The nanowires are grown using either chemical vapor deposition (CVD) or chemical vapor transport (CVT) on silicon substrates covered with a thin silicon oxide film, the oxide film desirably having a thickness of no greater than about 5 nm and, desirably, no more than about 2 nm (e. g. , about 1-2 nm). The metal silicide nanowires and heterostructures made from the nanowires are well-suited for use in CMOS compatible wire-like electronic, photonic, and spintronic devices.


Andrew Schmitt Photo 3

Metal Silicide Nanowires And Methods For Their Production

US Patent:
7803707, Sep 28, 2010
Filed:
Aug 17, 2006
Appl. No.:
11/506147
Inventors:
Song Jin - Madison WI, US
Andrew L. Schmitt - Madison WI, US
Yipu Song - Madison WI, US
Assignee:
Wisconsin Alumni Research Foundation - Madison WI
International Classification:
H01L 21/44
US Classification:
438682, 257E21478, 257E21586, 257E21593, 438681
Abstract:
The present invention provides metal silicide nanowires, including metallic, semiconducting, and ferromagnetic semiconducting transition metal silicide nanowires. The nanowires are grown using either chemical vapor deposition (CVD) or chemical vapor transport (CVT) on silicon substrates covered with a thin silicon oxide film, the oxide film desirably having a thickness of no greater than about 5 nm and, desirably, no more than about 2 nm (e. g. , about 1-2 nm). The metal silicide nanowires and heterostructures made from the nanowires are well-suited for use in CMOS compatible wire-like electronic, photonic, and spintronic devices.