ANDRE ANDERS
Pilots at Avila Pl, Richmond, CA

2012013, Jun 7, 2012

Apr 13, 2010

13/264692

Andre Anders - El Cerrito CA, US

The Regents of the University of California - Oakland CA

C23C 14/35

20419213, 20429803

A method and apparatus for achieving very high deposition rate magnetron sputtering wherein the surface of a target and especially the race track zone area of the target, in one embodiment may be heated to such a degree that the target material approaches the melting point and sublimation sets in. Controlled heating is achieved primarily through the monitoring of the temperature of the target material and with the aid of a processor subsequently controlling the target temperature by adjustment of the power being inputted to the target. This controlled heating to the sublimation point is particularly effecting in high deposition rate metal coating of parts when used in conjunction with HIPIMS deposition. The apparatus for controlling temperature of the target in one embodiment includes a thermocouple, which is electronically connected to a controller or microcomputer which is programmed to control the power of the pulse to the target, and the duty cycle of the power pulses as the primary means for regulating the temperature of the system.

2013004, Feb 21, 2013

Oct 5, 2012

13/645962

The Regents of the University of California - Oakland CA, US
Andre Anders - El Cerrito CA, US

The Regents of the University of California - Oakland CA

C23C 14/35

20419212, 20429816, 20429821, 20429811

A plasma lens for enhancing the quality and rate of sputter deposition onto a substrate is described herein. The plasma lens serves to focus positively charged ions onto the substrate while deflecting negatively charged ions, while at the same time due to the line of sight positioning of the lens, allowing for free passage of neutrals from the target to the substrate. The lens itself is formed of a wound coil of multiple turns, inside of which are deposed spaced lens electrodes which are electrically paired to impress an E field overtop the B field generated by the coil, the potential applied to the electrodes increasing from end to end towards the center of the lens, where the applied voltage is set to a high potential at the center electrodes as to produce a potential minimum on the axis of the lens.

8568572, Oct 29, 2013

Jun 10, 2010

12/797829

Andre Anders - El Cerrito CA, US
Joakim Andersson - Berkeley CA, US

The Regents of the University of California - Oakland CA

C23C 14/00, C23C 14/32, C23C 4/00, C25B 9/00, C25B 11/00, C25B 13/00, B05D 1/08, B05D 3/14, H05H 1/26

20419212, 20419238, 20429801, 20429841, 427446, 427562, 427564

A method and apparatus are described for very low pressure high powered magnetron sputtering of a coating onto a substrate. By the method of this invention, both substrate and coating target material are placed into an evacuable chamber, and the chamber pumped to vacuum. Thereafter a series of high impulse voltage pulses are applied to the target. Nearly simultaneously with each pulse, in one embodiment, a small cathodic arc source of the same material as the target is pulsed, triggering a plasma plume proximate to the surface of the target to thereby initiate the magnetron sputtering process. In another embodiment the plasma plume is generated using a pulsed laser aimed to strike an ablation target material positioned near the magnetron target surface.

2009006, Mar 12, 2009

Sep 5, 2008

12/205721

Andre Anders - El Cerrito CA, US

NANOCHIP, INC. - Fremont CA

C23C 14/28

20419212, 20429802, 20429809

A dual-cathode arc plasma source is combined with a computer-controlled bias amplifier to synchronize substrate bias with the pulsed production of plasma. Accordingly, bias can be applied in a material-selective way. The principle has been applied to the synthesis metal-doped diamond-like carbon films, where the bias was applied and adjusted when the carbon plasma was condensing, and the substrate was at ground when the metal was incorporated. In doing so, excessive sputtering by too-energetic metal ions can be avoided while the sp/spratio can be adjusted. It is shown that the resistivity of the film can be tuned by this species-selective bias. The principle can be extended to multiple-material plasma sources and complex materials.

8574410, Nov 5, 2013

Feb 17, 2009

12/989378

Andre Anders - El Cerrito CA, US

The Regents of the University of California - Oakland CA

C23C 14/35

20419212, 20429806, 20429808, 20429814, 20429816, 20429819

A high power impulse magnetron sputtering apparatus and method using a vacuum chamber with a magnetron target and a substrate positioned in the vacuum chamber. A field coil being positioned between the magnetron target and substrate, and a pulsed power supply and/or a coil bias power supply connected to the field coil. The pulsed power supply connected to the field coil, and the pulsed power supply outputting power pulse widths of greater that 100 μs.

2010022, Sep 9, 2010

Mar 3, 2010

12/716838

Andre Anders - El Cerrito CA, US

The Regents of the University of California - Oakland CA

G02F 1/19

359288

A phase change material is applied as a very thin film to a transparent substrate such as glass, which material when switched from the amorphous to the crystalline state and back again can affect the reflectivity/transmittance of the combined substrate-coating system. When used with glass panels in the fabrication of relatively large area window glass, the change in spectrally selective transmittance can be used to modulate the amount of sunlight passing through the glass, and thus reduce the amount of cooling required for an interior space in the summertime, and the amount of heating required of that same interior space in the wintertime, while also optimizing the use of visible daylight. Exemplary of a suitable phase change material for glass coating is GeSb or BiSn. Heating of the phase change material to initiate a change in phase can be provided by the application of electric energy, such as supplied from a pulsed power supply, or radiant energy, such as from a laser.