ALLAN M. RADMAN
Anesthesiologist Assistant in Aptos, CA

6550091, Apr 22, 2003

Oct 4, 2000

09/680166

Allan Radman - Aptos CA
Mario Stella - Glasgow, GB

Lam Research Corporation - Fremont CA

B08B 102

15 77, 15 881, 15 882, 15 883, 15102, 15230, 1523018

A substrate cleaning system incorporating an edge scrubbing roller is disclosed. The system includes a cleaning station having a first brush and a second brush. The second brush is oriented relative to the first brush so as to receive a flat circular substrate therebetween. The first brush and the second brush are configured to simultaneously scrub a first and second surface of the flat circular substrate. The cleaning station also includes a scrubbing roller that is configured to receive an edge of the flat circular substrate. The scrubbing roller has a scrubbing pad for scrubbing a first surface edge of the first surface, a second surface edge of the second surface, and an edge that is not part of either the first or second surface. The edge scrubbing provided by the scrubbing roller advantageously assists in removing edge beading, metal debris, and other particulates that form during fabrication operations, such as metal deposition. In one example, a spray nozzle or multiple nozzles can be directed at the scrubbing roller so as to deliver targeted cleaning fluids that further assist in removing the desired materials from the wafer periphery, whether it be on the top surface edge, the actual edge, or the bottom surface edge.

6910949, Jun 28, 2005

Apr 25, 2001

09/843323

Allan M. Radman - Aptos CA, US

Lam Research Corporation - Fremont CA

B24B001/00, B24B047/02, B24B041/06

451 41, 451287, 451288, 451398, 451402

A polishing head for use in an apparatus for chemically-mechanically polishing semiconductor wafers is provided. The polishing head includes a first side having at least a portion thereof operably connectable with a spindle on the apparatus; and a second side opposite the first side, the second side having a substantially spherical cap shape comprising an outer region adapted to apply a first force onto a semiconductor wafer against a polishing pad, and an inner region adapted to apply a second force onto the semiconductor wafer against the polishing pad, the second force being different from the first force, whereby the first force and the second force cause the polishing pad to planarize the semiconductor wafer substantially uniformly. A method of polishing semiconductor wafers is also provided.

6187684, Feb 13, 2001

Dec 9, 1999

9/458550

Jeffrey J. Farber - Delmar NY
Allan M. Radman - Aptos CA
Helmuth W. Treichel - Milpitas CA

Lam Research Corporation - Fremont CA

H01L 21302

438704

A method for post plasma etch cleaning a semiconductor wafer is provided. The semiconductor wafer has a plurality of layers formed thereon, and one of the plurality of layers is an oxide layer that has an overlying photoresist mask. The method includes plasma etching a via feature in the oxide layer. The plasma etching is configured to generate a polymer film on sidewalls of the via feature. An ashing operation is then performed to remove the photoresist mask. The method then moves to brush scrubbing the oxide layer and the via feature defined in the oxide layer with first chemicals in a first brush station. Brush scrubbing the oxide layer and the via feature follows with DI water in the first brush station. Then, the oxide layer and the via feature are brush scrubbed with second chemicals in a second brush station. In the same second brush station, the oxide layer and the via feature are scrubbed with DI water.

6875091, Apr 5, 2005

Feb 28, 2001

09/796955

Allan M. Radman - Aptos CA, US
Alan J. Jensen - Troutdale OR, US
Helmuth Treichel - Milpitas CA, US
Robert G. Boehm - Alameda CA, US
Michael S. Lacy - Pleasanton CA, US
Eric A. Dunton - Garland TX, US

Lam Research Corporation - Fremont CA

B24B053/07

451 56, 451 72, 451285, 451443, 51121, 438633

A method and apparatus for conditioning a polishing pad is described, wherein the polishing pad has a polishing surface for polishing the semiconductor wafer. The method includes positioning a sonic energy generator above the polishing surface of the polishing pad, and applying sonic energy to the polishing surface of the polishing pad. The apparatus a sonic energy generator adapted to be positioned above the polishing surface, the sonic energy generator including a transducer, and a liquid carrier in flow communication with the transducer, wherein the transducer transmits sonic energy into the liquid carrier and the liquid carrier is applied to the polishing surface of the polishing belt.

2001004, Dec 6, 2001

Jun 29, 1999

09/343208

JEFF FARBER - DELMAR NY, US
ALLAN M. RADMAN - APTOS CA, US
JULIA SVIRCHEVSKI - SAN JOSE CA, US
HELMUTH TREICHEL - MILPITAS CA, US

B08B003/12, B08B007/04

134/001300, 134/001000, 134/034000, 134/153000, 134/902000

A method that involves spraying a liquid agitated with a sonic wave at a megasonic frequency onto a substrate from a nozzle positioned over the substrate. Simultaneously, the substrate is spun above 300 RPM while the nozzle is swept over the substrate. The substrate may be brushed in a brush station before agitating the liquid with the sonic wave. An apparatus having an arm in fluid communication with a nozzle that has an angular position greater than 0°. Also, there is a substrate spinner positioned below the nozzle.