ALFRED R GENIS
Water and Wastewater in Douglas, MA
License number
Massachusetts 12373
Issued Date
Jul 15, 2011
Expiration Date
Dec 31, 2011
Type
Drinking Water Operator
Address
Address
Douglas, MA 01516
Professional information
Alfred Genis - Douglas, MA
Work:
R.M.D. Radiation Monitoring Devices
Novel Compound Semiconductor Scientist - Consulting Apollo Diamond - Framingham, MA
Director Advanced Development SOITEC - Peabody, MA
Senior Support Engineer Schlumberger ATE/ IVS - Concord, MA
Applications Engineering and Technical Service Manager Micracor Photonic Communications Systems - Acton, MA
Quality and Manufacturing Manager Ibis Technology - Danvers, MA
Quality Control Manager Spectrum Technologies - Holliston, MA
Product Quality Specialist
Novel Compound Semiconductor Scientist - Consulting Apollo Diamond - Framingham, MA
Director Advanced Development SOITEC - Peabody, MA
Senior Support Engineer Schlumberger ATE/ IVS - Concord, MA
Applications Engineering and Technical Service Manager Micracor Photonic Communications Systems - Acton, MA
Quality and Manufacturing Manager Ibis Technology - Danvers, MA
Quality Control Manager Spectrum Technologies - Holliston, MA
Product Quality Specialist
Education:
Central New England College - Worcester, MA
B.S. in Computer Science Northeastern University - Boston, MA
certificate in Education Wentworth Institute - Boston, MA
Electronic Engineering Massachusetts Institute of Technology
B.S. in Computer Science Northeastern University - Boston, MA
certificate in Education Wentworth Institute - Boston, MA
Electronic Engineering Massachusetts Institute of Technology
Diamond Medical Devices
US Patent:
2011005, Mar 3, 2011
Filed:
Nov 3, 2010
Appl. No.:
12/938766
Inventors:
Robert C. Linares - Sherborn MA, US
Patrick J. Doering - Holliston MA, US
Bryant Linares - Sherborn MA, US
Alfred R. Genis - East Douglas MA, US
William W. Dromeshauser - Norwell MA, US
Michael Murray - Mountain View CA, US
Alicia E. Novak - Denver CO, US
John M. Abrahams - Scarsdale NY, US
Patrick J. Doering - Holliston MA, US
Bryant Linares - Sherborn MA, US
Alfred R. Genis - East Douglas MA, US
William W. Dromeshauser - Norwell MA, US
Michael Murray - Mountain View CA, US
Alicia E. Novak - Denver CO, US
John M. Abrahams - Scarsdale NY, US
Assignee:
Apollo Diamond, Inc - Framingham MA
International Classification:
A61B 17/00, A61F 2/06, A61F 2/64
US Classification:
606 1, 623 124, 623 27
Abstract:
Masked and controlled ion implants, coupled with annealing or etching are used in CVD formed single crystal diamond to create structures for both optical applications, nanoelectromechanical device formation, and medical device formation. Ion implantation is employed to deliver one or more atomic species into and beneath the diamond growth surface in order to form an implanted layer with a peak concentration of atoms at a predetermined depth beneath the diamond growth surface. The composition is heated in a non-oxidizing environment under suitable conditions to cause separation of the diamond proximate the implanted layer. Further ion implants may be used in released structures to straighten or curve them as desired. Boron doping may also be utilized to create conductive diamond structures.
Method Of Forming A Waveguide In Diamond
US Patent:
8058085, Nov 15, 2011
Filed:
Jul 11, 2006
Appl. No.:
11/996482
Inventors:
Robert C. Linares - Sherborn MA, US
Patrick J. Doering - Holliston MA, US
William W. Dromeshauser - Norwell MA, US
Bryant Linares - Sherborn MA, US
Alfred R. Genis - East Douglas MA, US
Patrick J. Doering - Holliston MA, US
William W. Dromeshauser - Norwell MA, US
Bryant Linares - Sherborn MA, US
Alfred R. Genis - East Douglas MA, US
Assignee:
Apollo Diamond, Inc - Framingham MA
International Classification:
H01L 21/00
US Classification:
438 31, 438105, 438795, 257E21041, 257E21085, 257E21324
Abstract:
N-V centers in diamond are created in a controlled manner. In one embodiment, a single crystal diamond is formed using a CVD process, and then annealed to remove N-V centers. A thin layer of single crystal diamond is then formed with a controlled number of N-V centers. The N-V centers form Qubits for use in electronic circuits. Masked and controlled ion implants, coupled with annealing are used in CVD formed diamond to create structures for both optical applications and nanoelectromechanical device formation. Waveguides may be formed optically coupled to the N-V centers and further coupled to sources and detectors of light to interact with the N-V centers.
Enhanced Diamond Polishing
US Patent:
2008017, Jul 17, 2008
Filed:
Jan 17, 2007
Appl. No.:
11/624107
Inventors:
Alfred R. Genis - East Douglas MA, US
William W. Dromeshauser - Norwell MA, US
Robert C. Linares - Sherborn MA, US
William W. Dromeshauser - Norwell MA, US
Robert C. Linares - Sherborn MA, US
International Classification:
C01B 31/06
US Classification:
423446, 451 57
Abstract:
A grown single crystal diamond is polished using a non contact polishing technique, which leaves a residue on the diamond surface. In one embodiment, a wet chemical etch is performed to remove the residue, leaving a highly polished single crystal diamond surface. In a further embodiment, a colloidal silica solution is used in combination with rotating polishing pads to remove the residue. Both residue removing techniques may be used in further embodiments.
Method Of Forming A Waveguide In Diamond
US Patent:
8455278, Jun 4, 2013
Filed:
Nov 14, 2011
Appl. No.:
13/295752
Inventors:
Robert C. Linares - Sherborn MA, US
Patrick J. Doering - Holliston MA, US
William W. Dromeshauser - Norwell MA, US
Bryant Linares - Sherborn MA, US
Alfred R. Genis - East Douglas MA, US
Patrick J. Doering - Holliston MA, US
William W. Dromeshauser - Norwell MA, US
Bryant Linares - Sherborn MA, US
Alfred R. Genis - East Douglas MA, US
Assignee:
Apollo Diamond, Inc - Framingham MA
International Classification:
H01L 21/00, C30B 33/08, C30B 33/12
US Classification:
438 31, 216 2, 216 40, 216 41, 216 87, 438105, 257E21344
Abstract:
N-V centers in diamond are created in a controlled manner. In one embodiment, a single crystal diamond is formed using a CVD process, and then annealed to remove N-V centers. A thin layer of single crystal diamond is then formed with a controlled number of N-V centers. The N-V centers form Qubits for use in electronic circuits. Masked and controlled ion implants, coupled with annealing are used in CVD formed diamond to create structures for both optical applications and nanoelectromechanical device formation. Waveguides may be formed optically coupled to the N-V centers and further coupled to sources and detectors of light to interact with the N-V centers.
Diamond Structure Separation
US Patent:
2005018, Aug 18, 2005
Filed:
Feb 11, 2005
Appl. No.:
11/056338
Inventors:
Patrick Doering - Holliston MA, US
Alfred Genis - Douglas MA, US
Robert Linares - Framingham MA, US
Alfred Genis - Douglas MA, US
Robert Linares - Framingham MA, US
International Classification:
B32B009/00, C23C016/00
US Classification:
428408000, 427523000
Abstract:
The present invention provides a method and composition used for separating a synthetic diamond from its substrate, involving the use of ion implantation to implant ions/atoms within a diamond substrate, followed by growth of synthetic diamond on the implanted surface, and finally separation of the grown diamond, together with a portion of the implanted substrate surface, by heating in a non-oxidizing environment. The resulting composite structure can be used as is, or can be further processed, as by removing the substrate portion from the grown diamond.
Structures Formed In Diamond
US Patent:
2006015, Jul 20, 2006
Filed:
Jul 11, 2005
Appl. No.:
11/178623
Inventors:
Robert Linares - Sherborn MA, US
Patrick Doering - Holliston MA, US
William Dromeshauser - Norwell MA, US
Bryant Linares - Sherborn MA, US
Alfred Genis - East Douglas MA, US
Patrick Doering - Holliston MA, US
William Dromeshauser - Norwell MA, US
Bryant Linares - Sherborn MA, US
Alfred Genis - East Douglas MA, US
International Classification:
H01L 31/0312, H01L 21/00
US Classification:
257077000, 438105000, 257E29104
Abstract:
N-V centers in diamond are created in a controlled manner. In one embodiment, a single crystal diamond is formed using a CVD process, and then annealed to remove N-V centers. A thin layer of single crystal diamond is then formed with a controlled number of N-V centers. The N-V centers form Qubits for use in electronic circuits. Masked and controlled ion implants, coupled with annealing are used in CVD formed diamond to create structures for both optical applications and nanoelectromechanical device formation. Waveguides may be formed optically coupled to the N-V centers and further coupled to sources and detectors of light to interact with the N-V centers.
Enhanced Diamond Polishing
US Patent:
2007025, Nov 1, 2007
Filed:
Jul 2, 2007
Appl. No.:
11/772686
Inventors:
Alfred Genis - East Douglas MA, US
William Dromeshauser - Norwell MA, US
Robert Linares - Sherborn MA, US
William Dromeshauser - Norwell MA, US
Robert Linares - Sherborn MA, US
International Classification:
C01B 31/06
US Classification:
428402000, 423291000, 423446000
Abstract:
A grown single crystal diamond is polished using a non contact polishing technique, which leaves a residue on the diamond surface. In one embodiment, a wet chemical etch is performed to remove the residue, leaving a highly polished single crystal diamond surface. In a further embodiment, a colloidal silicon solution is used in combination with rotating polishing pads to remove the residue. Both residue removing techniques may be used in further embodiments.
Grown Diamond Mosaic Separation
US Patent:
8048223, Nov 1, 2011
Filed:
Jul 21, 2005
Appl. No.:
11/186421
Inventors:
Alfred Genis - East Douglas MA, US
Robert C. Linares - Sherborn MA, US
Patrick J. Doering - Holliston MA, US
Robert C. Linares - Sherborn MA, US
Patrick J. Doering - Holliston MA, US
Assignee:
Apollo Diamond, Inc. - Framingham MA
International Classification:
C30B 29/02
US Classification:
117 89, 117104, 117105, 117 90, 117929
Abstract:
The present invention provides in one example embodiment a synthetic diamond and a method of growing such a diamond on a plurality of seed diamonds, implanting the grown diamond with ions, and separating the grown diamond from the plurality of seed diamonds.
Carbon Grit
US Patent:
8641999, Feb 4, 2014
Filed:
Jul 11, 2005
Appl. No.:
11/178622
Inventors:
Patrick J. Doering - Holliston MA, US
Alfred Genis - East Douglas MA, US
Robert C. Linares - Sherborn MA, US
John J. Calabria - Maynard MA, US
Alfred Genis - East Douglas MA, US
Robert C. Linares - Sherborn MA, US
John J. Calabria - Maynard MA, US
Assignee:
SCIO Diamond Technology Corporation - Greer SC
International Classification:
B01J 3/06, C01B 31/02, B03C 1/00, C23C 16/00, C01B 31/00, C30B 29/00
US Classification:
423446, 423461, 423156, 4272497, 4272498, 204173, 501 86
Abstract:
Plasma assisted chemical vapor deposition is used to form single crystal diamond from a seed and methane. A susceptor is used to support the seed. Under certain conditions, crystalline grit is formed in addition to the diamond. The crystalline grit in one embodiment comprises mono crystals or twin crystals of carbon, each having its own nucleus. The crystals form in columns or tendrils to the side of the monocrystalline diamond or off a side of the susceptor. The crystals may have bonding imperfections which simulate doping, providing conductivity. They may also be directly doped. Many tools may be coated with the grit.