Inventors:
Gary X. Cao - Santa Clara CA, US
George Chen - Los Gatos CA, US
Brandon L. Ward - San Jose CA, US
Nancy J. Wheeler - Mountain View CA, US
Alan Wong - San Jose CA, US
Assignee:
Intel Corporation - Santa Clara CA
International Classification:
G01N 23/00, G03F 7/20, G03F 7/00, G03F 7/40
US Classification:
250311, 250306, 250307, 250310, 25049222, 2504923, 430310, 430313, 430314, 430317, 430323, 356634, 356635, 356636, 438 8, 438 16, 438584
Abstract:
A CD-SEM (critical dimension-scanning electron microscope) system may utilize a technique for characterizing and reducing shrinkage carryover due to CD-SEM measurements. The system may identify the affects of CD-SEM measurements on the resist and adjust the operating parameters for a particular resist to avoid or significantly reduce shrinkage carryover. In this manner, the system may obtain more reliable CD measurements and avoid damage to the measured feature.